Schottky barrier diode KEC KDR412-RTK P with rectification and silicon epitaxial planar construction
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The KDR412 is a Schottky barrier type diode designed for low-power rectification in switching power supplies. It features a small surface mounting type (USC) package and a low forward voltage (VF max=0.5V), offering high reliability. Its silicon epitaxial planar construction ensures robust performance.
Product Attributes
- Construction: Silicon epitaxial planar
- Type: Schottky Barrier Type Diode
- Application: Low Power Rectification for Switching Power Supply
- Package Type: Small Surface Mounting Type (USC)
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Peak Reverse Voltage | VRM | 40 | V | ||||
| DC Reverse Voltage | VR | 20 | V | ||||
| Average Forward Current | IO | 0.5 | A | ||||
| Peak Forward Surge Current | IFSM | 3 | A | ||||
| Junction Temperature | Tj | 125 | |||||
| Storage Temperature Range | Tstg | -40+125 | |||||
| Forward Voltage | VF (1) | V | IF=10mA | 0.3 | |||
| Forward Voltage | VF (2) | V | IF=500mA | 0.5 | |||
| Reverse Current | IR | A | VR=10V | 30 | |||
| Total Capacitance | CT | pF | VR=10V, f=1MHz | 20 |
Dimensions (USC Package)
| Dimension | Millimeters |
|---|---|
| A | 2.50 0.2 |
| B | 1.25 0.05 |
| C | 0.90 0.05 |
| D | 1.70 0.05 |
| E | 0.126 0.03 |
| F | 0~0.1 |
| G | 0.15 0.05 |
| H | 0.4 0.1 |
| J | 0.30 0.06 |
| K | 0.27 0.10 |
| L | 4~6 |
| M | 1.0 MAX |
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Sellina