AC Power Control Device KY BTA16-800B TRIAC with 16A RMS Current and 1000V Peak Off State Voltage
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Product Description
BTA/BTB16 Series TRIACs
The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Origin: Shenzhen
- Product Series: BTA/BTB16 Series
- TRIAC Type: 3 Quadrants, 4 Quadrants
- Available Packages: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263
Technical Specifications
| Symbol | Parameter | Conditions | BTA16/BTB16-600 | BTA16/BTB16-800 | Unit |
| VDRM | Repetitive Peak Off-State Voltage | 800 | 1000 | V | |
| VRRM | Repetitive Peak Off-State Voltage | 800 | 1000 | V | |
| IT(RMS) | R.M.S On-State Current | Tc=110C | 16 | 16 | A |
| ITSM | Surge On-State Current | 170/180 | 170/180 | A | |
| It | It for fusing | Tp=10ms | 116 | 116 | As |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | 1 | W |
| IGM | Peak Gate Current | Tj=125C, tp=20us | 4 | 4 | A |
| Tj | Operating Junction Temperature | -40~125 | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | -40~150 | C | |
| IDRM | Repetitive Peak Off-State Current | Tj=25C | 5 | 5 | uA |
| IDRM | Repetitive Peak Off-State Current | Tc=125C | 1 | 1 | mA |
| IRRM | Repetitive Peak Reverse Current | Tc=25C | 5 | 5 | uA |
| IRRM | Repetitive Peak Reverse Current | Tc=125C | 1 | 1 | mA |
| VTM | Forward "on" voltage | IT=23A, tp=380us | 1.5 | 1.5 | V |
| VGT | Gate trigger voltage | VD=12V ,RL=30 | 1.5 | 1.5 | V |
| di/dt | Critical rate of rise of on- state current | I,II,III F=100Hz, IG=2xIGT, tr100ns | 50 | 50 | A/us |
| di/dt | Critical rate of rise of on- state current | IV | 10 | 10 | A/us |
| IGT | Gate trigger current | I,II,III VD=12V, RL=30 | 10 / 25 / 50 / 25 / 50 | 10 / 25 / 50 / 25 / 50 | mA |
| IGT | Gate trigger current | IV | 50 / 100 | 50 / 100 | mA |
| IH | Holding current | IT=0.2A | 25 / 35 / 50 / 25 / 50 | 25 / 35 / 50 / 25 / 50 | mA |
| VGD | Gate non-trigger voltage | VD=VDRM, TJ=125C,RL=3.3K | 0.2 | 0.2 | V |
| dv/dt | Critical-rate of rise of commutation voltage | TJ=125C, VD=2/3VDRM, Gate | 100 / 400 / 1000 / 200 / 400 | 100 / 400 / 1000 / 200 / 400 | V/us |
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