Silicon Epitaxial Planar Transistor LangJie SS8050 with High Collector Current in SOT23 Package

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Product Description

Product Overview

The SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It is complementary to the SS8550 and comes in a SOT-23 package.

Product Attributes

Type No.: SS8050
Marking: Y1
Package Code: SOT-23
Lead-free: Yes

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				1.5	A
Collector Dissipation	PC	TC=25			300	mW
Junction and Storage Temperature	Tj,Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=2mA,IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=40V,IE=0			0.1	A
Collector cut-off current	ICEO	VCE=20V,IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE	VCE=1V,IC=100mA	120	400
DC current gain	hFE	VCE=1V,IC=800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800 mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800 mA, IB= 80mA			1.2	V
Base-emitter voltage	VBE	VCE=1V IC=10mA		1		V
Transition frequency	fT	VCE=10V, IC= 50mA f=30MHz		100		MHz