Silicon Carbide Schottky Diode KNSCHA KN3D10065G with Enhanced System Efficiency and Surge Capability

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Product Description

Product Overview

The KN3D10065G is a Silicon Carbide Schottky Diode designed for high-frequency operation and high-temperature applications. It offers zero forward/reverse recovery current, high blocking voltage, and a positive temperature coefficient on VF, leading to higher system efficiency and reliability. Its temperature-independent switching behavior and high surge current capability make it suitable for demanding power applications.

Product Attributes

Brand: KNSCHA
Material: Silicon Carbide
Package Type: DFN 8x8

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
Peak Repetitive Reverse Voltage	VRRM		650	V
			650	V
			650	V

Continuous Forward Current	IF	TC=25C	28	A
		TC=135C	11
		TC=140C	10
Non repetitive Forward Surge Current	IFSM	TC = 25C, tp=10 ms, Half Sine Pulse	50	A
		TC = 110C, tp=10 ms, Half Sine Pulse	40
		TC = 25C, tp=10 s, Square	300
Repetitive peak Forward Surge Current	IFRM	TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	40	A
Repetitive peak Forward Surge Current	IFRM	TC = 110C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	30	A
Total power dissipation	PD	TC=25C	83	W
Operating Junction Temperature	TJ		-55 to 175	C
Storage Temperature	TSTG		-55 to 175	C
DC Blocking Voltage	VDC	IR = 250A,TJ = 25C	650	V
Forward Voltage	VF	IF = 10A, TJ = 25C	1.5 - 1.8	V
		IF = 10A, TJ = 125C	1.65
		IF = 10A, TJ = 175C	1.8
Reverse Current	IR	VR = 650V, TJ = 25C	10 - 80	uA
		VR = 650V, TJ = 125C	68
		VR = 650V, TJ = 175C	190
Total Capacitive Charge	QC	VR = 400V	23	nC
Total Capacitance	C	VR = 1V, TJ = 25C, Freq = 1MHz	387	pF
		VR = 200V, TJ = 25C, Freq = 1MHz	48
		VR = 400V, TJ = 25C, Freq = 1MHz	33
Thermal Resistance	Rth(j-c)	junction-case	1.8	0C/W