High reliability LangJie D882 transistor with 6 volt emitter base voltage and wide storage temperature range

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Product Description

Product Overview

This document details the features, maximum ratings, and electrical characteristics of the D882 (NPN) transistor. It is designed for various electronic applications requiring specific power dissipation and current gain parameters.

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Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
Power dissipation	PC	(TA=25 unless otherwise noted)			500	mW
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				30	V
Emitter-Base Voltage	VEBO				6	V
Collector Current -Continuous	IC				3000	mA
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	VCBO	IC = 100A, IE=0	40			V
Collector-emitter breakdown voltage	VCEO	IC = 10mA, IB=0	30			V
Emitter-base breakdown voltage	VEBO	IE= 100A, IC=0	6			V
Collector cut-off current	ICBO	VCB= 40V, IE=0			1	A
Collector cut-off current	ICEO	VCE= 30V, IB=0			10	A
Emitter cut-off current	IEBO	VEB= 6V, IC=0			1	A
DC current gain	hFE(1)	VCE=2V, IC= 1A	60		400
DC current gain	hFE(2)	VCE=2V, IC= 100mA		32
Collector-emitter saturation voltage	VCE(sat)	IC= 2A, IB= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= 2A, IB= 0.2 A			1.5	V
Transition frequency	fT	VCE= 5V , Ic=0.1A f =10MHz		50		MHz
CLASSIFICATION OF HFE
Rank	Range
R	60-120
O	100-200
Y	160-320
GR	200-400
Pinout
1. BASE	2. COLLECTOR	3. EMITTER
Package
SOT-89
Marking
D882(NPN) Marking : 882