High Speed Switching NPN Silicon Transistor KTP MJE13009-2 Suitable for Motor Control and Regulators

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Product Description

Product Overview

The MJE13009-2 is an NPN Silicon Transistor designed for high-speed switching applications. It is particularly suitable for use in switching regulators and motor control systems, offering high voltage switching capabilities and fast switching performance.

Product Attributes

Brand: KTP Semiconductor
Model: MJE13009-2
Type: NPN Silicon Transistor
Package: TO-220
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
VCBO	Collector-Base Voltage				700	V
VCEO	Collector-Emitter Voltage				400	V
VEBO	Emitter-Base Voltage				9	V
IC	Collector Current (DC)				12	A
ICP	Collector Current (Pulse)				24	A
IB	Base Current				6	A
PC	Collector Dissipation (TC=25C)				100	W
TJ	Junction Temperature				150	C
TSTG	Storage Temperature		-65	~	150	C
VCEO(sus)	Collector-Emitter Sustaining Voltage	IC = 10mA, IB = 0	400			V
IEBO	Emitter Cut-off Current	VEB = 9V, IC = 0			1	mA
hFE	DC Current Gain	VCE = 5V, IC = 5A	8
hFE	DC Current Gain	VCE = 5V, IC = 8A	6
VCE(sat)	Collector-Emitter Saturation Voltage	IC = 5A, IB = 1A		1		V
		IC = 8A, IB = 1.6A		1.5		V
		IC = 12A, IB = 3A		3		V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 5A, IB = 1A		1.2		V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 8A, IB = 1.6A		1.6		V
Cob	Output Capacitance	VCB = 10V, f = 0.1MHz			180	pF
fT	Current Gain Bandwidth Product	VCE = 10V, IC = 0.5A		4		MHz
tON	Turn On Time	VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6		1.1		s
tSTG	Storage Time	VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6		3		s
tF	Fall Time	VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6		0.7		s