Load switch and pwm application p channel mosfet KIA Semicon Tech KIA3401 with rohs compliant design
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Product Description
Product Overview
The KIA3401 is a P-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(on), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The KIA3401 is a Pb-free product, meeting ROHS & Sony 259 specifications, and is available as a Green Product ordering option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KIA3401
- Certifications: Pb-free (ROHS & Sony 259 specifications)
- Product Type: Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=-250A | -30 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=-24V, VGS=0V | - | - | -1 | A |
| Gate-body leakage current | IGSS | VGS=+12V, VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -0.7 | -1 | -1.3 | V |
| On state drain current | ID(on) | VGS=-4.5V, VDS=-5V | -25 | - | - | A |
| Static drain-source on-resistance | RDS(on) | VGS=-10V,ID=-4.0A | - | 50 | 60 | m |
| VGS=-4.5V,ID=-3.0A | - | 60 | 70 | m | ||
| VGS=-2.5V,ID=-1.2A | - | 85 | 100 | m | ||
| Forward transconductance | gfs | VDS=-5.0V, ID=-5.0A | 7 | 11 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=-1A | - | - | -1.2 | V |
| Maximum body-diode continuous current | IS | - | - | - | -2.2 | A |
| Input capacitance | Ciss | VDS=-15V,VGS=0V, f=1MHz | - | 954 | - | pF |
| Output capacitance | Coss | VDS=-15V,VGS=0V, f=1MHz | - | 115 | - | pF |
| Reverse transfer capacitance | Crss | VDS=-15V,VGS=0V, f=1MHz | - | 77 | - | pF |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 6 | - | |
| Total gate charge | Qg | VDS=-15V, VGS=-4.5V ID =-4.0A | - | 9.4 | - | nC |
| Gate-source charge | Qgs | VDS=-15V, VGS=-4.5V ID =-4.0A | - | 2.0 | - | nC |
| Gate-drain charge | Qgd | VDS=-15V, VGS=-4.5V ID =-4.0A | - | 3.0 | - | nC |
| Switching characteristics | td(on) | VDS=-15V, RL=3.6,, RG=6, VGS=-10V | - | 6.3 | - | ns |
| tr | VDS=-15V, RL=3.6,, RG=6, VGS=-10V | - | 3.2 | - | ns | |
| td(off) | VDS=-15V, RL=3.6,, RG=6, VGS=-10V | - | 38.2 | - | ns | |
| tf | VDS=-15V, RL=3.6,, RG=6, VGS=-10V | - | 12 | - | ns | |
| Diode characteristics | trr | IF=-4A,dI/dt=100A/s | - | 20.2 | - | nS |
| Qrr | IF=-4A,dI/dt=100A/s | - | 11.2 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Units | |
| Drain-source voltage | VDS | -30 | V | |
| Gate-source voltage | VGS | +12 | V | |
| Continuous drain current | ID | TA=25C | -4.0 | A |
| TA=70C | -3.5 | A | ||
| Pulsed drain current | IDM | -30 | A | |
| Total power dissipation | PD | TA=25 C | 1.4 | W |
| TA=70C | 1 | W | ||
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C |
Thermal Characteristics
| Parameter | Symbol | Typ | Max | Unit |
| Maximum junction-ambient (t<10s) | RJA | 65 | 90 | C/W |
| Maximum junction-ambient | RJA | 85 | 125 | C/W |
| Maximum junction-Lead | RJL | 43 | 60 | C/W |
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