Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode

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Product Description

Product Overview

The MJD122 is a medium power NPN Darlington transistor designed for linear switching applications. It offers high DC current gain and features a built-in damper diode between the collector and emitter for enhanced protection. This device is electrically similar to the popular TIP122 and is complementary to the MJD127.

Product Attributes

Brand: Yongyutai
Model: MJD122
Type: Darlington Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage	BVCBO	IC = 10mAIE = 0			100	V
Collector-emitter voltage	BVCEO	IC = 30mAIB = 0			100	V
Emitter-base voltage	BVEBO	IE = 30mAIC = 0			5	V
Collector cut-off current	ICBO	VCB = 100VIE = 0			10	A
Collector cut-off current	ICEO	VCE = 50VIE = 0			10	A
Emitter cut-off current	IEBO	VEB = 5VIC = 0			2	mA
DC current gain	hFE	VCE= 4VIC= 4A		1000
DC current gain	hFE	VCE= 4VIC= 8A		500
Collector-emitter saturation voltage	VCE(sat)	IC =4AIB = 16mA			2	V
Collector-emitter saturation voltage	VCE(sat)	IC =8AIB = 80mA			4	V
Base-emitter saturation voltage	VBE(sat)	IC =8AIB = 80mA			4.5	V
Base-emitter on voltage	VBE (on)	VCE= 4VIC= 4A		2.8		V
Output capacitance	Cob	VCB= 10Vf=1MHz			200	pF
Collector-base voltage	BVCBO				100	V
Collector-emitter voltage	BVCEO				100	V
Emitter-base voltage	BVEBO				5	V
Collector current (DC)	IC				8	A
Collector current (Pluse)	ICP				8	A
Collector dissipation power	PC	TA =25			1.75	W
Collector dissipation power	PC	TC =25			20	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150