power switching Dual N channel MOSFET KIA Semicon Tech KNE4603A2 with low RDS on and trench technology
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Product Description
Product Overview
The KNE4603A2 is a high cell density trenched Dual N-channel MOSFET from KIA SEMICONDUCTORS, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It features super low gate charge, green device availability, and excellent Cdv/dt effect decline due to advanced high cell density trench technology. This device meets RoHS and Green Product requirements.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KNE4603A2
- Type: Dual N-CHANNEL MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | 30 | - | - | V |
| Drain-Source breakdown voltage Temperature coefficient | BVDSS/ TJ | Reference to 25C, ID=1mA | - | 0.034 | - | V/C |
| Drain-Source Leakage Current | IDSS | VDS=24V,VGS=0V, TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=24V,VGS=0V, TJ=55C | - | - | 5 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| Gate threshold voltage Temperature coefficient | VGS(th) | - | - | -3.84 | - | mV/C |
| Static drain-source on- resistance | RDS(on) | VGS=10V,ID=7A | - | 14.5 | 20 | m |
| Static drain-source on- resistance | RDS(on) | VGS=4.5V,ID=4A | - | 20 | 28 | m |
| Forward transcend ductance | gFS | VDS=5V, ID=7A | - | 6.2 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=1A, TJ=25C | - | - | 1.2 | V |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.04 | 2.1 | |
| Total gate charge | Qg | VDS=15V, VGS=4.5V ID =7A | - | 6 | - | nC |
| Gate-source charge | Qgs | - | - | 2.2 | - | nC |
| Gate-drain charge | Qgd | - | - | 2 | - | nC |
| Turn-on delay time | td(on) | VDD=15V, RG=3.3, VGS=10V ID=7A | - | 1.2 | - | ns |
| Rise time | tr | - | - | 40 | - | ns |
| Turn-off delay time | td(off) | - | - | 18 | - | ns |
| Fall time | tf | - | - | 7.2 | - | ns |
| Input capacitance | Ciss | VGS=0V, VDS=15V F=1.0MHZ | - | 583 | - | pF |
| Output capacitance | Coss | - | - | 77 | - | pF |
| Reverse transfer capacitance | Crss | - | - | 59 | - | pF |
| Continuous source current | IS | VG=VD=0V,Force current | - | - | 7 | A |
| Pulsed source current | ISM | - | - | - | 35 | A |
| Reverse recovery time | trr | IF=7A,dl/dt=100A/us, TJ=25C | - | 7.2 | - | nS |
| Reverse recovery charge | Qrr | - | - | 2.9 | - | nC |
| Parameter | Symbol | Rating | Units |
| Drain-source voltage | VDSS | 30 | V |
| Gate-source voltage | VGS | +20 | V |
| Continuous drain current | ID | 7.0 | A |
| Continuous drain current | ID | 5.6 | A |
| Pulsed drain current | IDM | 35 | A |
| Single pulse avalanche energy | EAS | 20 | mJ |
| Avalanche current | IAS | 20 | A |
| Total power dissipation | PD | 1.5 | W |
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C |
| Thermal resistance-junction to ambient | RJA | 85 | C/W |
| Thermal resistance-junction to case | RJC | 25 | C/W |
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