High Voltage KIA Semicon Tech KNF6180A 10A 800V N Channel MOSFET with Fast Recovery Diode Technology

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Product Description

Product Overview

The KIA KNX6180A is a 10A, 800V N-CHANNEL MOSFET featuring proprietary new planar technology. It offers a low Gate Charge to minimize switching loss and a fast recovery body diode. This MOSFET is ideal for applications such as ATX Power supplies and LCD Panel Power.

Product Attributes

Brand: KIA
Part Number: KNX6180A
Origin: KIA SEMICONDUCTORS

Technical Specifications

Symbol	Parameter	TO-220	TO-220F	Unit
Absolute Maximum Ratings
VDSS	Drain-to-Source Voltage	800	800	V
VGSS	Gate-to-Source Voltage	30		V
ID	Continuous Drain Current	10		A
IDM	Pulsed Drain Current at VGS=10V	Figure6
EAS	Single Pulse Avalanche Energy	460		mJ
dv/dt	Peak Diode Recovery dv/dt	5.0		V/ns
PD	Power Dissipation	160	55	W
Derating Factor above 25 C	1.28	0.44	W/ C
TL	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds	300		C
TPAK	Package Body for 10 seconds	260		C
TJ&TSTG	Operating and Storage Temperature Range	-55 to 150		C
Thermal Characteristics
RJC	Thermal Resistance, Junction-to-Case	0.78	2.27	C /W
RJA	Thermal Resistance, Junction-to-Ambient	62	100
Electrical Characteristics - OFF
BVDSS	Drain-to-Source Breakdown Voltage	800		V
IDSS	Drain-to-Source Leakage Current	1		uA
IGSS	Gate-to-Source Leakage Current	100		nA
Electrical Characteristics - ON
RDS(ON)	Static Drain-to-Source On-Resistance	1.0
VGS(TH)	Gate Threshold Voltage	2.0 - 4.0		V
gFS	Forward Transconductance	22		S
Electrical Characteristics - Dynamic
Ciss	Input Capacitance	2910		pF
Coss	Output Capacitance	195		pF
Crss	Reverse Transfer Capacitance	25		pF
Qg	Total Gate Charge	60		nC
Qgs	Gate-to-Source Charge	12		nC
Qgd	Gate-to-Drain (Miller) Charge	21		nC
Resistive Switching Characteristics
td(ON)	Turn-on Delay Time	20		nS
trise	Rise Time	10		nS
td(OFF)	Turn-Off Delay Time	68		nS
tfall	Fall Time	23		nS
Source-Drain Body Diode Characteristics
ISD	Continuous Source Current	10		A
ISM	Pulsed Source Current	40		A
VSD	Diode Forward Voltage	1.5		V
trr	Reverse recovery time	200		ns
Qrr	Reverse recovery charge	2.2		uC