Silicon Schottky Barrier Diode KUU BAT54W Fast Switching Low Forward Voltage for Electronic Applications

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Product Description

Product Overview

This datasheet describes the BAT54W/AW/CW/SW series Silicon Schottky Barrier Diodes, designed for extremely fast switching speeds. These diodes are suitable for various electronic applications requiring efficient rectification and low forward voltage drop.

Product Attributes

Brand: Yongyutai
Material: Silicon
Package: Plastic surface mounted package; 3 leads SOT-323

Technical Specifications

Part Number	Marking	Peak Repetitive Reverse Voltage (VRRM)	Working Peak Reverse Voltage (VRWM)	Forward Continuous Current (IFM)	Power Dissipation (PD)	Reverse Breakdown Voltage (V(BR)R)	Forward Voltage (VF)	Reverse Current (IR)	Diode Capacitance (CD)	Reverse Recovery Time (trr)
BAT54W	L4	30 V	30 V	200 mA	200 mW	30 V	0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA)	2 A (VR=25V)	10 pF (VR=1V,f=1MHz)	5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100)
BAT54AW	L42	30 V	30 V	200 mA	200 mW	30 V	0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA)	2 A (VR=25V)	10 pF (VR=1V,f=1MHz)	5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100)
BAT54CW	L43	30 V	30 V	200 mA	200 mW	30 V	0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA)	2 A (VR=25V)	10 pF (VR=1V,f=1MHz)	5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100)
BAT54SW	L44	30 V	30 V	200 mA	200 mW	30 V	0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA)	2 A (VR=25V)	10 pF (VR=1V,f=1MHz)	5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100)