N Channel MOSFET 10A 450V KIA Semicon Tech KNF6145A with Low Gate Charge and Fast Recovery Body Diode
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Product Description
Product Overview
This 10A, 450V N-Channel MOSFET from KIA SEMICONDUCTORS, model KNF6145A, utilizes proprietary new planar technology for high performance. It offers a low ON-resistance of 0.39 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal for ballast and lighting, DC-AC inverters, and other applications.
Product Attributes
- Brand: KIA
- Part Number: KNF6145A
- Package: TO-220F
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | 450 | V | |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 11 | A | TC=25C |
| Continuous Drain Current | ID | Figure 3 | A | TC=100C |
| Pulsed Drain Current | IDM | Figure 6 | A | VGS=10V |
| Single Pulse Avalanche Energy | EAS | 500 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | V/ns | ISD=10A, di/dt |
| Power Dissipation | PD | 45 | W | |
| Derating Factor above 25C | PD | 0.37 | W/C | |
| Maximum Temperature for Soldering (Leads) | TL | 300 | C | 0.063in (1.6mm) from Case for 10 seconds |
| Maximum Temperature for Soldering (Package Body) | TPAK | 260 | C | for 10 seconds |
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | C/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | 450 | V | VGS=0V, ID=250uA |
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=450V, VGS=0V |
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=360V,TJ=125C |
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-to-Source ON Resistance | RDS(ON) | 0.39 | VGS=10V, ID=5A (typ.) | |
| Drain-to-Source ON Resistance | RDS(ON) | 0.5 | VGS=10V, ID=5A (max.) | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA (min.) |
| Gate Threshold Voltage | VGS(TH) | 4.0 | V | VDS=VGS,ID=250uA (max.) |
| Forward Transconductance | gfs | 12 | S | VDS=20V,ID=10A (typ.) |
| Input Capacitance | Ciss | 1200 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Output Capacitance | Coss | 140 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Reverse Transfer Capacitance | Crss | 18 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Total Gate Charge | Qg | 25 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Gate-to-Source Charge | Qgs | 6 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Gate-to-Drain (Miller) Charge | Qg | 10 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Turn-on Delay Time | td(ON) | 12 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Rise Time | trise | 24 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Turn-Off Delay Time | td(OFF) | 40 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Fall Time | tfall | 26 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Continuous Source Current | ISD | 10 | A | Integral PN-diode in MOSFET |
| Pulsed Source Current | ISM | 40 | A | |
| Forward Voltage | VSD | 1.5 | V | IS=10A, VGS=0V (max.) |
| Reverse recovery time | trr | 303 | ns | IF=10A, VGS=0V diF/dt=100A/s, TJ=+150C (typ.) |
| Reverse recovery charge | Qrr | 1.8 | uC | IF=10A, VGS=0V diF/dt=100A/s, TJ=+150C (typ.) |
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