50A 650V Silicon Power IGBT KIA Semicon Tech KGM50N65AI Suitable for Solar Inverters and UPS Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The KIA SEMICONDUCTORS 50N65AI is a 50A, 650V Silicon Power IGBT designed for demanding applications. It features low VCE(sat), fast switching, high ruggedness, and short-circuit rating, making it ideal for solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems.
Product Attributes
- Brand: KIA
- Model: 50N65AI
- Package: TO-247
- Technology: Silicon Power IGBT
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj25C |
| DC collector current | IC | 50 | A | limited by Tvjmax, TC=100C |
| Pulsed collector current | ICpuls | 100 | A | tp limited by Tvjmax |
| Diode forward current | IF | 50 | A | limited by Tvjmax, TC=100C |
| Diode pulsed current | IFpuls | 100 | A | tp limited by Tvjmax |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Power dissipation | Ptot | 275 | W | TC=25C |
| Operating junction temperature | Tvj(0P) | -40 to +150 | C | |
| Storage temperature | Tstg | -40 to +150 | C | |
| Soldering temperature | 260 | C | wave soldering, 1.6mm from case for 10s | |
| IGBT Thermal Resistance, Junction-Case | R(J-C) | 0.45 | C/W | |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=250A |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=1mA |
| Collector-emitter saturation voltage | VCEsat | 1.58 (typ.) | V | VGE=15V, IC=60A, Tvj=25C |
| Collector-emitter saturation voltage | VCEsat | 1.95 (typ.) | V | VGE=15V, IC=60A, Tvj=150C |
| Diode forward voltage | VF | 1.63 (typ.) | V | VGE=0V, IF=60A, Tvj=25C |
| Diode forward voltage | VF | 1.37 (typ.) | V | VGE=0V, IF=60A, Tvj=150C |
| Gate-emitter threshold voltage | VGE(th) | 4.2 - 5.8 | V | VCE=VGE, IC=250A |
| Zero gate voltage collector current | ICES | 1 (max.) | mA | VCE=650V, VGE=0V, Tvj=25C |
| Gate-emitter leakage current | IGES | 200 (max.) | nA | VCE=0V, VGE=20V |
| Transconductance | gfs | 77 (typ.) | S | VCE=20V, IC=60A |
| Input capacitance | Cies | 5500 (typ.) | pF | VCE=30V, VGE=0V, f=1MHz |
| Reverse transfer capacitance | Cres | 110 (typ.) | pF | VCE=30V, VGE=0V, f=1MHz |
| Gate charge | QG | 500 (typ.) | nC | VCC=520V, IC=60.0A, VGE=15V |
| Turn-on delay time | td(on) | 30 (typ.) | nS | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Rise time | tr | 70 (typ.) | nS | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Turn-off delay time | td(off) | 20 (typ.) | nS | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Fall time | tf | 40 (typ.) | nS | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Turn-on energy | Eon | 2.25 (typ.) | mJ | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Turn-off energy | Eoff | 0.5 (typ.) | mJ | VCC=400V, IC=60A, VGE=0.0/15V, Rg=12 |
| Diode reverse recovery time | trr | 133 (typ.) | nS | IF=40A, VR=300V, di/dt= 600A/s |
| Diode reverse recovery charge | Qrr | 1.48 (typ.) | C | IF=40A, VR=300V, di/dt= 600A/s |
| Diode peak reverse recovery current | Irrm | 21 (typ.) | A | IF=40A, VR=300V, di/dt= 600A/s |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina