Silicon Carbide Diode KNSCHA KN3D20065D High Blocking Voltage and Zero Recovery Current for Operation

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Product Description

Product Overview

The Silicon Carbide Schottky KN3D10065H Diode is a high-performance diode designed for demanding applications. It offers zero forward/reverse recovery current, high blocking voltage, and high-frequency operation, leading to higher system efficiency and reliability. Its positive temperature coefficient on VF and temperature-independent switching behavior make it suitable for parallel device configurations without thermal runaway and for high-temperature applications.

Product Attributes

Brand: KNSCHA
Material: Silicon Carbide

Technical Specifications

Parameter	Symbol	Test conditions	Value	Unit
Peak Repetitive Reverse Voltage	VRRM		650	V
				Peak Reverse Surge Voltage	VRSM		650	V
				DC Blocking Voltage	VR		650	V
				Continuous Forward Current	IF	TC=25C	30	A
		TC=135C	12	A
		TC=145C	10	A
Non repetitive Forward Surge Current	IFSM	TC = 25C, tp=10 ms, Half Sine Pulse	60	A
		TC = 150C, tp=10 ms, Half Sine Pulse	50
		TC = 25C, tp=10 s, Square	460
Repetitive peak Forward Surge Current	IFRM	TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	50	A
Repetitive peak Forward Surge Current	IFRM	TC = 150C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	40	A
Total power dissipation	PD	TC=25C	88	W
Operating Junction Temperature	TJ		-55 to 175	C
Storage Temperature	TSTG		-55 to 175	C
DC Blocking Voltage	VDC	IR = 250A,TJ = 25C	650	V
Forward Voltage	VF	IF = 10A, TJ = 25C	1.45 - 1.8	V
		IF = 10A, TJ = 125C	1.6
		IF = 10A, TJ = 175C	1.7
Reverse Current	IR	VR = 650V, TJ = 25C	12 - 80	uA
		VR = 650V, TJ = 125C	68
		VR = 650V, TJ = 175C	190
Total Capacitive Charge	QC	VR = 400V	23	nC
Total Capacitance	C	VR = 1V, TJ = 25C, Freq = 1MHz	380	pF
		VR = 200V, TJ = 25C, Freq = 1MHz	48
		VR = 400V, TJ = 25C, Freq = 1MHz	31
Thermal Resistance	Rth(j-c)	junction-case	1.7	C/W