Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching
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Product Description
Product Overview
The KN3D10120A is a Silicon Carbide Schottky Diode featuring a 1.2kV rating, zero reverse recovery current, and temperature-independent switching for high-frequency operation. Its unipolar nature eliminates switching losses, enabling high efficiency and reducing the need for large heatsinks. This diode is suitable for parallel operation without thermal runaway and is ideal for applications such as switching mode power supplies, boost diodes in PFC, DC/DC and AC/DC converters, and free-wheeling diodes in inverters.
Product Attributes
- Brand: KN3D
- Material: Silicon Carbide
- Package: TO-220-2
- Marking: KNSCHA
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Note |
| Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage (VRRM) | 1200 | V | ||
| Surge Peak Reverse Voltage (VRSM) | 1300 | V | ||
| DC Peak Reverse Voltage (VR) | 1200 | V | ||
| Continuous Forward Current (IF) | 36.7 | A | Tc=25 | Fig. 3 |
| 17 | A | Tc=135 | Fig. 3 | |
| 10 | A | Tc=156 | Fig. 3 | |
| Non-Repetitive Forward Surge Current (IFSM) | 96 | A | Tc=25 tp=10 msHalf Sine Pulse | |
| Power Dissipation (Ptot) | 185 | W | Tc=25 | Fig. 4 |
| 80 | W | Tc=110 | Fig. 4 | |
| Operating Junction Temperature Range (TJ) | -55 to +175 | |||
| Storage Temperature Range (Tstg) | -55 to +175 | |||
| Electrical Characteristics | ||||
| Forward Voltage (VF) | 1.45 | V | IF = 10 ATJ = 25 | Fig. 1 |
| 1.75 | V | IF = 10 ATJ = 175 | Fig. 1 | |
| Reverse Current (IR) | 5 | A | VR = 1200 VTJ = 25 | Fig. 2 |
| 100 | A | VR = 1200 VTJ = 175 | Fig. 2 | |
| Total Capacitive Charge (QC) | 61 | nC | VR = 800 VIF = 10 A TJ = 25 | Fig. 6 |
| Total Capacitance (C) | 800 | pF | VR = 0 V TJ = 25 f = 1 MHz | Fig. 5 |
| 57 | pF | VR = 400 VTJ = 25 f = 1 MHz | Fig. 5 | |
| 42 | pF | VR = 800 VTJ = 25 f = 1 MHz | Fig. 5 | |
| Capacitance Stored Energy (EC) | 15.6 | J | VR = 800 V | Fig. 7 |
| Thermal Characteristics | ||||
| Thermal Resistance from Junction to Case (RJC) | 0.81 | /W | Fig.8 | |
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