Built in damper diode and high current gain PNP transistor KTP TIP127 for power switching applications

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Product Description

Product Overview

The TIP127 is a PNP transistor designed for high DC current gain and features electrical similarity to the popular TIP12 series. It includes a built-in damper diode between the collector and emitter, making it suitable for various power switching and amplification applications.

Product Attributes

Brand: KTP Semiconductor
Model: TIP127
Package: TO-220 Plastic-Encapsulate

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				100	V
Collector-Emitter Voltage	VCEO				100	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC					A
Collector Dissipation	PC	Ta=25			2	W
Junction and Storage Temperature	TJ, Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	Ic=1mA,IE=0	100			V
Collector-emitter breakdown voltage	V(BR)CEO	Ic=30mA,IB=0	100			V
Emitter-base breakdown voltage	V(BR)EBO	IE=3mA,IC=0	5			V
Collector cut-off current	ICBO	VCB=100V,IE=0			10	A
Collector-emitter cut-off current	ICEO	VCE=50V,IE=0			10	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			2	mA
DC current gain	hFE(2)	VCE=4V,IC=4A		1000	10000
DC current gain	hFE(3)	VCE=4V,IC=8A		100
Collector-emitter saturation voltage	VCE(sat)1	IC=4A,IB=16mA			2	V
Collector-emitter saturation voltage	VCE(sat)2	IC=8A,IB=80mA			4	V
Base-emitter saturation voltage	VBE(sat)	IC=8A,IB=80mA			4.5	V
Base-emitter voltage*	VBE	VCE=4V,IC=4A		2.8		V
Collector output capacitance	Cob	VCB=10V,IE=0,f=0.1MHz			200	pF