KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output and Power Dissipation
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Product Description
Product Overview
The 2SB772 is a Silicon PNP Power Transistor designed for high current output up to 3A. It features low saturation voltage and serves as a complement to the 2SD882. This transistor is suitable for applications requiring efficient power handling.
Product Attributes
- Brand: KTP Semiconductor
- Marking Code: 2SB772
- Material: Silicon
- Type: PNP Power Transistor
- Complement to: 2SD882
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | VCBO | -40 | V | IC=-100uA, IE=0 |
| Collector-Emitter Breakdown Voltage | VCEO | -30 | V | IC=-10mA, IB=0 |
| Emitter-Base Breakdown Voltage | VEBO | -6 | V | IE=-100uA, IC=0 |
| Collector Current | IC | -3 | A | |
| Collector Power Dissipation | PC | 1.25 | W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55~150 | ||
| Collector Cutoff Current | ICBO | -1 | uA | VCB=-40V, IE=0 |
| Collector Cutoff Current | ICEO | -10 | uA | VCB=-30V, IB=0 |
| Emitter Cutoff Current | IEBO | -1 | uA | VEB=-5V, IC=0 |
| DC Current Gain | HFE(1) | 60-400 | VCE=-2V, IC=-1A | |
| DC Current Gain | HFE(2) | 30 | VCE=-2V, IC=-20mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC=-2A, IB=-200mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.5 | V | IC=-2A, IB=-200mA |
| Transition frequency | fT | 50 | MHz | VCE=-5V, IC=-100mA, f=10MHz |
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