650V Silicon Carbide Diode KNSCHA KN3D06065A with Continuous Forward Current 19A and TO220-2 Package

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Product Description

Product Overview

The KN3D06065A is a Silicon Carbide Schottky Diode designed for high-frequency operation and high-temperature applications. It offers zero forward/reverse recovery, high blocking voltage, and a positive temperature coefficient on VF, contributing to high system efficiency and reliability in demanding environments. Its temperature-independent switching behavior makes it suitable for hard switching applications and environmental protection.

Product Attributes

Brand: KNSCHA
Material: Silicon Carbide
Package: TO-220-2
Certifications: 100% avalanche tested

Technical Specifications

Parameter	Symbol	Test conditions	Value	Unit
Peak Repetitive Reverse Voltage	VRRM		650	V



Peak Reverse Surge Voltage	VRSM		650	V


DC Blocking Voltage	VR		650	V


Continuous Forward Current	IF	TC=25C	19	A
		TC=135C	8
		TC=150C	6

Non repetitive Forward Surge Current	IFSM	TC = 25C, tp=10 ms, Half Sine Pulse	40	A
		TC = 110C, tp=10 ms, Half Sine Pulse	35
		TC = 25C, tp=10 s, Square	300
Repetitive peak Forward Surge Current	IFRM	TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	35	A
Repetitive peak Forward Surge Current	IFRM	TC = 110C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse	30	A
Total power dissipation	PD	TC=25C	68	W
Operating Junction Temperature	TJ		-55 to 175	C
Storage Temperature	TSTG		-55 to 175	C
DC Blocking Voltage	VDC	IR = 250A,TJ = 25C	650	V


Forward Voltage	VF	IF = 6A, TJ = 25C	1.45 - 1.8	V
		IF = 6A, TJ = 125C	1.6
		IF = 6A, TJ = 175C	1.75

Reverse Current	IR	VR = 650V, TJ = 25C	7 - 80	A
		VR = 650V, TJ = 125C	38
		VR = 650V, TJ = 175C	108
Total Capacitive Charge	QC	VR = 400V	15	nC
Total Capacitance	C	VR = 1V, TJ = 25C, Freq = 1MHz	230	pF
		VR = 200V, TJ = 25C, Freq = 1MHz	33
		VR = 400V, TJ = 25C, Freq = 1MHz	24
Thermal Resistance	Rth(j-c)	junction-case	1.8	0C/W
Part Number	Package	Packing	Marking	M.O.Q
KN3D06065A	TO-220-2	50pcs / Tube	KN3D06065A	500