High Collector Current PNP Transistor KTP SS8550 for General Purpose Electronic Circuit Applications

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Product Description

Product Overview

The SS8550 is a PNP bipolar junction transistor designed for general-purpose applications. It features high collector current capability and serves as a complementary component to the SS8050 transistor. This device is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Brand: KTP Semiconductor
Part Number: SS8550
Package Type: SOT-23
Marking: SS8550

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-25	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-1.5	A
Collector Power Dissipation	PC	Ta=25			300	mW
Thermal Resistance Junction To Ambient	RJA			417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-40V, IE=0			-100	nA
Collector cut-off current	ICEO	VCE=-20V, IB=0			-100	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0			-100	nA
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	120		400
DC current gain	hFE(2)	VCE=-1V, IC=-800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB=-80mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB=-80mA			-1.2	V
Base-emitter voltage	VBE	VCE=-1V, IC=-10mA		-1		V
Transition frequency	fT	VCE=-10V,IC=-50mA , f=30MHz	100			MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			20	pF