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High density cell design N Channel MOSFET KUU K3080K offering good heat dissipation and uniformity

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Product Description

Product Overview

The K3080K is a high-performance N-Channel MOSFET featuring a high-density cell design for ultra-low RDS(ON). It offers fully characterized avalanche voltage and current with good stability and uniformity, making it suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supplies. The excellent package design ensures good heat dissipation.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum RatingsVDS30V
VGS20V
TJ150C
Common RatingsTSTG-50155C
PDTc=25C, Mounted on Large Heat Sink83W
Electrical CharacteristicsBV(BR)DSSVGS=0VID=250A30----V
IDSSVDS=30VVGS=0V----1uA
IGSSVGS=20VVDS=0V----100nA
Static Electrical CharacteristicsVGS(th)VDS=VGSID=250A11.63V
RDS(on)VGS=10VID=30A--4.76.5m
Dynamic Electrical CharacteristicsRDS(on)VGS=5VID=24A--7.310m
CISSVDS=15VVGS=0V f=1MHz--2015--pF
Switching CharacteristicsCOSSVDS=15VVGS=0V f=1MHz--250--pF
CRSSVDS=15VVGS=0V f=1MHz--235--pF
QgVDD=10VID=30A VGS=10VRG=2.7--61--nC
Source-Drain Diode CharacteristicsQgs--8.3--nC
Qgd--7.5--nC
td(on)--21--nS
tr--16--nS
td(off)--59--nS
tf--10.3--nS
VSDTj=25Is=24A----1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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