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TrenchFET technology N Channel MOSFET KUU NDS331N designed for load switching in portable electronics

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This N-Channel MOSFET in a SOT-23 package is designed for efficient power switching applications. It features TrenchFET technology for enhanced performance and low on-resistance, making it suitable for load switching in portable devices and DC/DC converters.

Product Attributes

  • Marking: NDS331N
  • Equivalent Circuit: 1.GATE, 2.SOURCE, 3.DRAIN

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Static Electrical CharacteristicsV(BR)DSSVGS = 0V, ID =250A20V
VGS(th)VDS =VGS, ID =250A0.451V
IGSSVDS =0V, VGS =12V100nA
IDSSVDS =16V, VGS =0V1A
RDS(on)VGS =4.5V, ID = 6A2225m
RDS(on)VGS =2.5V, ID =4A2835m
Dynamic Electrical CharacteristicsQgVDS =10V, VGS =4.5V, ID =6A7.710nC
CissVDS =10V, VGS =0V, f=1MHz574pF
CossVDS =10V, VGS =0V, f=1MHz70pF
Switching Characteristicstd(on)VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=678.7ns
trVDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6128ns
td(off)VDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6453ns
tfVDD=10V RL=5.5, ID 3.6A, VGEN=4.5V,Rg=680.9ns
Maximum RatingsVDS20V
ID6A
PD1.25W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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