Silicon P Channel Power MOSFET Lewa Micro LWS6T7AM ideal for portable equipment power management
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Product Description
LW Silicon P-Channel Power MOSFET - LWS6T7AM
The LWS6T7AM is a high-performance Silicon P-Channel Power MOSFET designed with SGT technology for excellent RDS(ON) and low gate charge. This MOSFET offers fast switching, low gate charge, low RDS(ON), and low reverse transfer capacitances, making it ideal for power management applications in portable equipment. It complies with ROHS and Halogen Free standards.
Product Attributes
- Brand: LW (Shanghai Lewa Micro-electronics Technology Co., Ltd)
- Origin: China
- Material: Silicon
- Certifications: ROHS, Halogen Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | -60 | V | |||
| VGS | Gate-to-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TA=25 °C | -2.5 | A | ||
| ID | Continuous Drain Current | TA=100 °C | -1.6 | A | ||
| IDM | Pulsed Drain Current | -10 | A | |||
| PD | Power Dissipation | TA=25 °C | 1.5 | W | ||
| IS | Diode Forward Current | TA =25 °C | -1.2 | A | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | °C | ||
| TL | Maximum Temperature for Soldering | t ≤ 10 sec | 260 | °C | ||
| Thermal Characteristics | ||||||
| RθJA | Thermal Resistance, Junction-to-Ambient | a2 | 150 | °C/W | ||
| Static Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=-250µA | -1.1 | -1.6 | -2.1 | V |
| IDSS | Drain to Source Leakage Current | VDS=-60V, VGS=0V | -1.0 | µA | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS=±20V, VDS=0V | -100 | nA | ||
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V, VDS=0V | -100 | nA | ||
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=-10V, ID=-2.5A | 88 | 110 | mΩ | |
| RDS(ON)2 | Drain-to-Source On-Resistance | VGS=-4.5V, ID=-2.0A | 108 | 150 | mΩ | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS =-30V, f = 1.0MHz | 315 | pF | ||
| Coss | Output Capacitance | VGS = 0V, VDS =-30V, f = 1.0MHz | 150 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS =-30V, f = 1.0MHz | 59 | pF | ||
| Qg | Total Gate Charge | VGS =-10V, VDS = -30V, ID =-2.5A | 6.0 | nC | ||
| Qgs | Gate Source Charge | VGS =-10V, VDS = -30V, ID =-2.5A | 1.2 | nC | ||
| Qgd | Gate Drain Charge | VGS =-10V, VDS = -30V, ID =-2.5A | 1.2 | nC | ||
| tr | Rise Time | ID =-2.5A, VDS =-30V, VGS =-10V, RG =5.0Ω | 4.0 | ns | ||
| td(ON) | Turn-on Delay Time | ID =-2.5A, VDS =-30V, VGS =-10V, RG =5.0Ω | 6.8 | ns | ||
| td(OFF) | Turn-Off Delay Time | ID =-2.5A, VDS =-30V, VGS =-10V, RG =5.0Ω | 16 | ns | ||
| tf | Fall Time | ID =-2.5A, VDS =-30V, VGS =-10V, RG =5.0Ω | 8.0 | ns | ||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IS=-2.5A, VGS=0V | -0.7 | -1.2 | V | |
| Package Marking and Ordering Information | ||||||
| Part Number | LWS6T7AM | |||||
| Package | SOT23 | |||||
| Packing | Reel | Qty. | 3000 | Pcs | ||
| Marking | S6T7A | |||||
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