High Current Capability Silicon Schottky Barrier Diode KUU MBR20150DS for Low Voltage Applications

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Product Description

Product Overview

The MBR20150DS is a Silicon Schottky Barrier Diode featuring a guard ring die construction for transient protection, low power loss, high efficiency, and high surge capability. It offers high current capability with a low forward voltage drop, making it suitable for low voltage, high frequency inverters, free-wheeling, and polarity protection applications. This product meets ROHS and Green Product requirements with full function reliability approval.

Product Attributes

Brand: MBR20150DS
Certifications: ROHS, Green Product
Material: Silicon Schottky Barrier Diode

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
ABSOLUTE MAXIMUM RATINGS
Peak repetitive reverse voltage	VRRM	(TA=25C, unless otherwise specified.)	150	V
Working peak reverse voltage	VRWM	(TA=25C, unless otherwise specified.)	150	V
DC blocking voltage	VR	(TA=25C, unless otherwise specified.)	150	V
RMS reverse voltage	VR(RMS)	(TA=25C, unless otherwise specified.)	105	V
Average rectified output current	IO	(TA=25C, unless otherwise specified.)	2010*2	A
Non-Repetitive peak forward surge current	IFSM	(8.3ms half sine wave)	150*2	A
Junction temperature	Tj	(TA=25C, unless otherwise specified.)	175	C
Storage temperature	Tstg	(TA=25C, unless otherwise specified.)	-55 ~ +150	C
Typical total capacitance	Cj (Ctot)	VR=5V,f=1MHz	500	pF
Thermal Resistance from Junction to Ambient	RJA	TO-252	100	C/W
Thermal Resistance from Junction to Ambient	RJA	TO-220F	58	C/W
Thermal Resistance From Junction To Case	RJC	TO-252	5	C/W
Thermal Resistance From Junction To Case	RJC	TO-220F	3	C/W
ELECTRICAL CHARACTERISTICS
Reverse voltage	V(BR)	IR=0.1mA	150	V
Reverse current	IR	VR=150V, Tj =25	0.5	uA
Reverse current	IR	VR=150V, Tj =125	2.0	mA
Forward voltage	VF	IF=5A, Tj =25	0.76	V
Forward voltage	VF	IF=5A, Tj =125	0.64	V
Forward voltage	VF	IF=10A, Tj =25	0.83 - 0.90	V
Forward voltage	VF	IF=10A, Tj =125	0.71	V