Silicon Bridge Rectifier LGE KBU8J Featuring 600 Volt Maximum Recurrent Peak Reverse Voltage and Molded Plastic Design

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Product Description

Silicon Bridge Rectifiers KBU8A-KBU8M

These Silicon Bridge Rectifiers are designed for efficient power conversion with high voltage and surge overload capabilities. They are ideal for printed circuit board applications, offering a reliable and cost-effective solution due to their molded plastic construction. The series provides a range of PRV ratings up to 1000V and surge overload ratings to 200 Amperes peak, making them suitable for various industrial and electronic applications.

Product Attributes

Brand: LGE Semiconductor (implied by URL)
Material: Molded plastic
Construction: Utilizing molded plastic technique
Lead Solderable: Per MIL-STD-202 method 208

Technical Specifications

Characteristic	Symbol	KBU8A	KBU8B	KBU8D	KBU8G	KBU8J	KBU8K	KBU8M	Units
Maximum Ratings
Maximum recurrent peak reverse voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	V
Maximum average forward Output current @TA=25	IF(AV)	8.0							A
Peak forward surge current 8.3ms single half-sine-wave	IFSM	200							A
Thermal Characteristics
Operating junction temperature range	TJ	- 55 ---- + 150
Storage temperature range	TSTG	- 55 ---- + 150
Typical thermal resistance (Junction to Ambient)	RJA	18							/W
Typical thermal resistance (Junction to Case)	RJC	3.0							/W
Electrical Characteristics
Maximum instantaneous forward voltage @4.0A	VF	1.0							V
Maximum reverse current @TA=25 at rated DC blocking voltage	IR	5.0							µA
Maximum reverse current @TA=100 at rated DC blocking voltage	IR	0.5							mA
It Rating for fusing @Tj=25	It	166							AS