KUU KSI2343CDS T1 GE3 P Channel 30V MOSFET Optimized for Load Switching in Portable and DC DC Circuits
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Product Description
Product Overview
This P-Channel 30V (D-S) MOSFET features TrenchFET Power MOSFET technology, making it suitable for load switching in portable devices and DC/DC converters. Its low on-state resistance and efficient design contribute to its performance in these applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS = 0V, ID = -250A | -30 | V | ||
| VDS = -30V, VGS =0V | 1 | A | ||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = -250A | -1 | -2 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10V, ID = -4A | 48 | 80 | m | |
| VGS = -4.5V, ID = -1.5A | 61 | 110 | m | |||
| Forward Transconductance | gfs | VDS = -4.5V, ID = -4A | 5.5 | S | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.8 | -1.3 | V | |
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulsed Diode Current | IDM | -25 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | -1 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance (Junction to Ambient, t5s) | RJA | 125 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55~+150 | ||||
| Input Capacitance | Ciss | VDS = -15V,VGS =0V, f=1MHz | 520 | pF | ||
| Output Capacitance | Coss | VDS = -15V,VGS =0V, f=1MHz | 100 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -15V,VGS =0V, f=1MHz | 65 | pF | ||
| Total Gate Charge | Qg | VDS = -15V,VGS = -10V, ID = -4.1A | 9.2 | nC | ||
| Gate-Source Charge | Qgs | VDS = -15V,VGS = -10V, ID = -4.1A | 1.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -15V,VGS = -10V, ID = -4.1A | 2.2 | nC | ||
| Gate Resistance | Rg | f=1MHz | 7.5 | 11.5 | ||
| Turn-on Delay Time | td(on) | VDS= -15V RL=4, ID -1A, VGEN= -10V,Rg=3 | 7.5 | ns | ||
| Rise Time | tr | VDS= -15V RL=4, ID -1A, VGEN= -10V,Rg=3 | 5.5 | ns | ||
| Turn-off Delay Time | td(off) | VDS= -15V RL=4, ID -1A, VGEN= -10V,Rg=3 | 19 | ns | ||
| Fall Time | tf | VDS= -15V RL=4, ID -1A, VGEN= -10V,Rg=3 | 7 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25 | -2.3 | A | ||
| Pulsed Diode Forward Current | ISM | Tc=25 | -20 | A |
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Sellina