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12 Volt P Channel MOSFET KUU KIRLML6401TRPBF Featuring Ultra Low On Resistance for Power Dissipation

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Price: Negotiable
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Product Description

Product Overview

This P-Channel 12-V(D-S) MOSFET features ultra low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.

Product Attributes

  • Brand: KIRLML6401TRPBF
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source VoltageVDS-12V
Gate-Source VoltageVGS±8V
Continuous Drain CurrentID-4.3A
Pulsed Diode CurrentIDM-34A
Power DissipationPD1.4W
Thermal Resistance Junction to AmbientRJA(t≤5s)100°C/W
Operating Junction TemperatureTJ150°C
Storage TemperatureTSTG-55+150°C
Static Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID = -250µA-12V
Gate-source threshold voltageVGS(th)VDS =VGS, ID = -250µA-0.4-1V
Gate-source leakageIGSSVDS =0V, VGS = ±8V±100nA
Zero gate voltage drain currentIDSSVDS = -12V, VGS =0V-1µA
Drain-source on-state resistanceRDS(on)VGS = -4.5V, ID = -4.3A50
VGS = -2.5V, ID = -2.5A85
VGS = -1.8V, ID = -2A125
Forward transconductancegfsVDS = -4.5V, ID = -4.3A8.3S
Diode forward voltageVSDIS=-1A, VGS=0V-0.8-1.2V
Continuous Source-Drain Diode CurrentIS-1.3A
Input capacitanceCissVDS = -10V,VGS =0V, f=1MHz830pF
Output capacitanceCoss180pF
Reverse transfer capacitanceCrss125pF
Total gate chargeQgVDS = -10V,VGS = -4.5V, ID = -4.3A10nC
Gate-source chargeQgs1.4nC
Gate-drain chargeQgd2.6nC
Gate resistanceRgf=1MHz6.5Ω
Turn-on delay timetd(on)VDS= -10V RL=6Ω, ID ≈ -1A, VGEN=- 4.5V,Rg=3Ω11ns
Rise timetr28ns
Turn-off delay timetd(off)45ns
Fall timetf34ns
Body Diode Reverse Recovery TimetrrIF= -4.3A, dI/dt=100A/µs22ns
Body Diode Reverse Recovery ChargeQrrIF= -4.3A, dI/dt=100A/µs8nC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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