Silicon epitaxial planar diode LangJie 1N4148 designed for rectification and switching applications
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Product Description
Product Overview
The 1N4148 is a silicon epitaxial planar diode designed for switching applications. It offers 500mW power dissipation and is guaranteed for high-temperature soldering. This diode is suitable for various electronic circuits requiring fast switching speeds and reliable rectification.
Product Attributes
- Brand: ELECTRONIC CHANGZHOU LANGJIL L LL CTRONIC CO.,LTD
- Origin: CHANGZHOU
- Material: Silicon epitaxial planar
- Color: Not specified
- Certifications: MIL-STD-750, Method 2026 (for terminals)
Technical Specifications
| Symbol | Parameter | 1N4148 | Units | Test Conditions |
| VRRM | Maximum repetitive peak reverse voltage | 500 | VOLTS | |
| VRMS | Maximum RMS voltage | 75 | VOLTS | |
| I(AV) | Maximum average forward rectified current | 1.0 | Amps | 0.375 (9.5mm) lead length at TA=25 C, single phase half-wave 60Hz, resistive or inductive load (for capacitive load current derate by 20%) |
| IFSM | Peak forward surge current | 4.0 | Amps | 8.3ms single half sine-wave superimposed on rated load |
| VF | Maximum instantaneous forward voltage | 1.0 | Volts | at 10mA |
| IR | Maximum DC reverse current | 4.0 | mA | TA=25 C, VR=75V |
| IR | Maximum DC reverse current | -60 to +200 | mA | TA=100 C, VR=20V |
| trr | Maximum reverse recovery time | 75 | ns | NOTL 1 |
| CJ | Typical junction capacitance | 100 | pF | NOTL 2 |
| TJ,TSTG | Operating junction and storage temperature range | -60 to +200 | C |
NOTL 1 Test condition: IF=10mA, IR=10mA, Irr=1mA, VR=6V, RL=100.
NOTL 2 Measured at: 1.0 MHz and applied reverse voltage of 4.0 volts.
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