Industrial Grade TRIAC KY BTA26-800B Featuring 800V Voltage and 25A RMS Current for Power Management

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Product Description

ShenZhenHanKingyuan Electronic BTA/BTB26 Series TRIACs

The BTA/BTB26 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance components designed for 3 and 4 quadrant applications. With an RMS on-state current of 25A and a low forward voltage (VGT) of 1.5V, these TRIACs offer efficient power control. They are available in voltage ratings of 800V and 1000V (VDRM/VRRM). Suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: ShenZhenHanKingyuan Electronic
Product Series: BTA/BTB26 Series
Origin: Shenzhen, China
Trademark: KY logo (registered)

Technical Specifications

Model	Quadrant	VDRM/VRRM (V)	IT(RMS) (A)	ITSM (A)	VTM (V)	IGT (mA)	Rth(j-c) (C/W)	Package Type
BTA26-800	3 / 4	800	25	280/300	1.55	35 (I,II,III)	1.1	TO-220A (Insulated), TO-220B (Non-Insulated), TO-263, TO-3P (Insulated)
BTA26-1000	3 / 4	1000	25	280/300	1.55	35 (I,II,III)	1.1	TO-220A (Insulated), TO-220B (Non-Insulated), TO-263, TO-3P (Insulated)

Electrical Characteristics (Tj=25C unless otherwise specified)

Symbol	Parameter	Test Conditions	Value	Unit
IDRM	Repetitive Peak Off-State Current	Tj=25C	5	uA
IDRM	Repetitive Peak Off-State Current	Tj=125C	3	mA
IRRM	Repetitive Peak Reverse Current	Tj=25C	5	uA
IRRM	Repetitive Peak Reverse Current	Tj=125C	3	mA
VTM	Forward "on" voltage	IT=35A, tp=380us	1.55	V
VGT	Gate trigger voltage	VD=12V, RL=30	1.5	V
di/dt	Critical rate of rise of on-state current	I,II,III, F=120Hz,Tj=125C, IG=2xIGT,tr100ns	50 (I,II,III) / 10 (IV)	A/us
IGT	Gate trigger current	I,II,III, VD=12V, RL=30	35 (I) / 50 (II) / 50 (III) / 100 (IV)	mA
IH	Holding current	IT=0.2A	60 (I) / 80 (II) / 80 (III)	mA
VDG	Gate non-trigger voltage	ALL, VD=VDRM, TJ=125C	0.2	V
dv/dt	Critical-rate of rise of commutation voltage	TJ=125C, VD=2/3VDRM, Gate	400 (I) / 1000 (II) / 500 (III)	V/us
Rth(j-c)	Thermal resistance Junction to case		1.1	C/W
Rth(j-a)	Thermal resistance Junction to ambient		50	C/W

Absolute Maximum Ratings (Tj=25C unless otherwise specified)

Symbol	Parameter	Conditions	Unit
VDRM, VRRM	Repetitive Peak Off-State Voltage	BTA26-800: 800V; BTA26-1000: 1000V	V
IT(RMS)	R.M.S On-State Current	Tc=110C	25	A
ITSM	Surge On-State Current	tp=10ms / tp=16.7ms	280/300	A
It	It for fusing	tp=10ms	520	As
PG(AV)	Average Gate Power Dissipation	Tj=125C	1	W
IGM	Peak Gate Current	Tj=125C	6	A
Tj	Operating Junction Temperature	-40~125	C
TSTG	Storage Temperature	-40~150	C