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Ultra Low On Resistance P Channel MOSFET KUU IRLML5203 30V Drain Source Voltage for DC DC Converters

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Price: Negotiable
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Product Description

Product Overview

This P-Channel 30V (D-S) MOSFET features ultra-low on-resistance and is ideal for load switching in portable devices and DC/DC converters. Available in tape and reel packaging.

Product Attributes

  • Brand: Not Specified
  • Origin: Not Specified
  • Material: Not Specified
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source VoltageVDS-30V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentID-3.0A
Pulsed Diode CurrentIDM-24A
Power DissipationPD1.25W
Thermal Resistance Junction to AmbientRθJA(t≤5s)100°C/W
Operating Junction TemperatureTJ150°C
Storage TemperatureTSTG-55+150°C
Drain-Source Breakdown VoltageV(BR)DSSVGS = 0V, ID = -250µA-30V
Gate-Source Threshold VoltageVGS(th)VDS =VGS, ID = -250µA-1-2.5V
Gate-Source LeakageIGSSVDS =0V, VGS = ±20V±100nA
Zero Gate Voltage Drain CurrentIDSSVDS = -24V, VGS =0V-1µA
Drain-Source On-State ResistanceRDS(on)VGS = -10V, ID = -3.0A98
Drain-Source On-State ResistanceRDS(on)VGS = -4.5V, ID = -2.5A165
Forward TransconductancegfsVDS = -10V, ID = -3A3.1S
Diode Forward VoltageVSDIS=1A, VGS=0V-0.8-1.2V
Continuous Source-Drain Diode CurrentIS-1.3A
Input CapacitanceCissVDS = -15V,VGS =0V, f=1MHz510pF
Output CapacitanceCoss71pF
Reverse Transfer CapacitanceCrss43pF
Total Gate ChargeQgVDS = -15V,VGS = -10V, ID = -3A9.5nC
Gate-Source ChargeQgs2.3nC
Gate-Drain ChargeQgd1.6nC
Gate ResistanceRgf=1MHz6.5Ω
Turn-on Delay Timetd(on)VDS= -15V RL=6Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω12ns
Rise Timetr18ns
Turn-off Delay Timetd(off)88ns
Fall Timetf52ns
Body Diode Reverse Recovery TimeTrrIF= -3.0A, dI/dt=100A/µs17ns
Body Diode Reverse Recovery ChargeQrrIF= -3.0A, dI/dt=100A/µs12nC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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