triac KY BTB16-800BW offering 16 amp rms current and multiple packaging options for industrial ac control

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Product Description

BTA/BTB16 Series TRIACs

The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
Product Series: BTA/BTB16 Series
Type: TRIACs
Quadrants: 3 Quadrants, 4 Quadrants
Packaging Options: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263, TO-220C (Non-Insulated)

Technical Specifications

Parameter	Conditions	BTA16/BTB16-800	BTA16/BTB16-1000	Unit
Repetitive Peak Off-State Voltage (VDRM/VRRM)		800	1000	V
R.M.S On-State Current (IT(RMS))	Tc=110C	16	16	A
Surge On-State Current (ITSM)	Tp=10ms	170/180	170/180	A
It for fusing	Tp=10ms	116	116	As
Average Gate Power Dissipation (PG(AV))	Tj=125C	1	1	W
Peak Gate Current (IGM)	tp=20us, Tj=125C	4	4	A
Operating Junction Temperature (Tj)		-40~125	-40~125	C
Storage Temperature (TSTG)		-40~150	-40~150	C

Parameter	Test Conditions	Value	Unit
Repetitive Peak Off-State Current (IDRM)	Tj=25C	≤5	uA
Repetitive Peak Off-State Current (IDRM)	Tc=125C	≤1	mA
Repetitive Peak Reverse Current (IRRM)	Tc=25C	≤5	uA
Repetitive Peak Reverse Current (IRRM)	Tc=125C	≤1	mA
Forward "on" voltage (VTM)	IT=23A, tp=380us	1.5	V
Gate trigger voltage (VGT)	VD=12V, RL=30Ω	≤1.5	V
Critical rate of rise of on-state current (di/dt)	I,II,III, F=100Hz, IG=2xIGT, tr≤100ns	≥50	A/us
Critical rate of rise of on-state current (di/dt)	IV, F=100Hz, IG=2xIGT, tr≤100ns	≥10	A/us
Gate trigger current (IGT)	I,II,III, VD=12V, RL=30Ω	≤10 / ≤25 / ≤50	mA
Gate trigger current (IGT)	IV, VD=12V, RL=30Ω	≤25 / ≤50	mA
Holding current (IH)	IT=0.2A	≤25 / ≤35 / ≤50	mA
Holding current (IH)	IT=0.2A	≤25 / ≤50	mA
Gate non-trigger voltage (VGD)	VD=VDRM, TJ=125°C, RL=3.3K	≥0.2	V
Critical-rate of rise of commutation voltage (dv/dt)	TJ=125°C, VD=2/3VDRM, Gate	≥100 / ≥400 / ≥1000	V/us
Critical-rate of rise of commutation voltage (dv/dt)	TJ=125°C, VD=2/3VDRM, Gate	≥200 / ≥400	V/us