Low on resistance smd power mosfet transistor LGE BSS123 designed for power management applications
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Product Description
BSS123 SMD Power MOSFET Transistor (N-Channel)
The BSS123 is an N-Channel SMD Power MOSFET Transistor designed for various power management applications. It features low on-resistance, low input and output capacitance, a low threshold voltage, and fast switching speeds, making it suitable for DC-to-DC converters, cellular and PCMCIA cards, cordless telephones, and portable battery power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic Package (SOT-23)
- Color: Not specified
- Certifications: RoHS Compliance and Halogen Free
Technical Specifications
| Symbol | Description | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-Source Breakdown Voltage | 100 | - | - | V | VGS=0V, ID=250A |
| VGS(th) | Gate Threshold Voltage | 0.8 | - | 2.8 | V | VDS=VGS, ID=1mA |
| IGSS | Gate-Body Leakage Current | - | - | 50 | nA | VDS=0V, VGS=20V |
| IDSS | Zero Gate Voltage Drain Current | - | - | 15 | A | VDS=0V, VGS=100V, TJ=25 C |
| RDS(ON) | Static Drain-to-Source On-Resistance | - | 5.0 | 6.0 | VGS=10V, ID=0.1A | |
| gFS | Forward Transconductance | 8.0 | - | - | mS | VDS=25V, ID=100mA |
| Ciss | Input Capacitance | - | 20 | - | pF | VDS=25V, VGS=0V, f=1MHz |
| Crss | Reverse Transfer Capacitance | - | 4.0 | - | pF | VDS=25V, VGS=0V, f=1MHz |
| Coss | Output Capacitance | - | 9.0 | - | pF | VDS=25V, VGS=0V, f=1MHz |
| ton | Turn-On Time | - | 20 | - | nS | VCC=30V, RGS=50, IC=0.28A, VGS=10V |
| toff | Turn-Off Time | - | 40 | - | nS | VCC=30V, RGS=50, IC=0.28A, VGS=10V |
| VSD | Drain-Source Diode Forward Voltage | - | - | 1.3 | V | VGS=0V, ID=0.34A |
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