Plastic encapsulated LangJie MMBT3904 NPN transistor in SOT23 package for general purpose applications

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Product Description

MMBT3904 SOT-23 Plastic-Encapsulate Transistors

The MMBT3904 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It is complementary to the MMBT3906 and offers reliable performance with its plastic encapsulation.

Product Attributes

Type: NPN Transistor
Complementary to: MMBT3906
Package: SOT-23
Marking: 1AM

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=10A, IE=0	60			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, IB=0	40			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector Cut-off Current	ICEX	VCE=30V, VEB(off)=3V			50	nA
Collector Cut-off Current	ICBO	VCB=60V, IE=0			100	nA
Emitter Cut-off Current	IEBO	VEB=5V, IC=0			100	nA
DC Current Gain	hFE(1)	VCE=1V, IC=10mA	100		300
	hFE(2)	VCE=1V, IC=50mA	60
	hFE(3)	VCE=1V, IC=100mA	30
Collector-Emitter Saturation Voltage	VCE(sat)	IC=50mA, IB=5mA			0.3	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=50mA, IB=5mA			0.95	V
Transition Frequency	fT	VCE=20V,IC=10mA, f=100MHz		300		MHz
Delay Time	td	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35		ns
Rise Time	tr	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35		ns
Storage Time	ts	VCC=3V, IC=10mA, IB1= IB2=1mA		200		ns
Fall Time	tf	VCC=3V, IC=10mA, IB1= IB2=1mA		50		ns
Collector Power Dissipation	PD	(Ta=25)			0.2	W
Thermal Resistance Junction to Ambient	RJA			625		/W
Junction Temperature (MAX.)	Tj				150
Storage Temperature	Tstg		-55		+150