Lingxingic 2SC3356 LX Silicon Bipolar Transistor Designed for Microwave and RF Amplifier Circuits

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Product Description

Product Overview

The 3356 is a silicon-based microwave bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suitable for demanding RF applications.

Product Attributes

Brand: Lingxingic
Origin: Shenzhen Lingxing Microelectronics Technology Co., Ltd.
Material: Silicon-based
Package: SOT-23

Technical Specifications

Parameter	Symbol	Rating Unit	Test Conditions	Criterion Unit	Min	Typ	Max
Absolute Maximum Ratings (Unless otherwise specified, Ta= 25)
Collector-Base Voltage (Open Circuit)	VCBO	20	V
Collector-Emitter Voltage (Open Circuit)	VCEO	12	V
Emitter-Base Voltage (Open Circuit)	VEBO	3	V
Collector Current	IC	100	mA
Power Dissipation	Ptot	150	mW
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55150
Electrical Characteristics (Unless otherwise specified, Ta= 25)
Collector Cutoff Current	ICBO		VCBO=20V,IE=0	uA		1.0
Emitter Cutoff Current	IEBO		VEBO=3.0V,IC=0	uA		1.0
DC Current Gain	HFE		VCE=10V,IC=20mA		130	200	300
Gain Bandwidth Product	fT		VCE=10V,IC=20mA	GHz		6.5
Power Gain	S21		VCE=10V,IC=20mA,f=1GHz	dB		8.5	9.5
Noise Figure	NF		VCE=10V,IC=10mA,f=1GHz	dB		1.1	2.0
HFE Binning Description:
HFE Range	Bin	Marking
130-160	C	R25
160-250	D	R25
250-300	F	R25
Ordering Information:
Product Part Number	Package Type	Marking	Reel Quantity	Box Quantity	Remarks
2SC3356(LX)	SOT-23	R25	3000PCS/Reel	30000PCS/Box