Medium power PNP transistor LangJie 2N5401 in SOT23 package for switching and amplification circuits

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Product Description

Product Overview

The 2N5401 is a PNP transistor in a SOT-23 package, designed for medium power amplification and switching applications. It is complementary to the MMBT5551.

Product Attributes

Type: PNP Transistor
Complementary to: MMBT5551
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				0.6	A
Collector Power Dissipation	PD				0.3	W
Thermal Resistance from Junction to Ambient	RJA			416		/W
Junction Temperature(MAX.)	Tj				150
Storage Temperature	Tstg		-55		+150
Electrical Characteristics
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-120V, IE=0			-0.1	A
Emitter cut-off current	IEBO	VEB=-4V, IC=0			-0.1	A
DC current gain	hFE(1)	VCE=-5V, IC=-1mA	80
DC current gain	hFE(2)	VCE=-5V, IC=-10mA	100		300
DC current gain	hFE(3)	VCE=-5V, IC=-50mA	50
Collector-emitter saturation voltage	VCE(sat)1	IC=-10mA, IB=-1mA			-0.2	V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50mA, IB=-5mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)1	IC=-10mA, IB=-1mA			-1	V
Base-emitter saturation voltage	VBE(sat)2	IC=-50mA, IB=-5mA			-1	V
Transition frequency	FT	VCE=-5V,IC=-10mA, f=30MHz	100			MHz
CLASSIFICATION OF hFE (2)
RANK			RANGE
L			100-200
H			200-300