General purpose PNP transistor LangJie MMBT3906 in SOT-23 package for versatile electronic circuits

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Product Description

MMBT3906 SOT-23 Plastic-Encapsulate Transistors

The MMBT3906 is a PNP transistor designed for general-purpose applications. It is complementary to the MMBT3904, offering a reliable and versatile component for various electronic circuits.

Product Attributes

Package: SOT-23
Transistor Type: PNP
Marking: 2A

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Maximum Ratings
Collector-Base Voltage	VCBO	(TA=25 unless otherwise noted)		-40	V
Collector-Emitter Voltage	VCEO	(TA=25 unless otherwise noted)		-40	V
Emitter-Base Voltage	VEBO	(TA=25 unless otherwise noted)		-5	V
Collector Current - Continuous	IC	(TA=25 unless otherwise noted)		-0.2	A
Collector Dissipation	PC	(TA=25 unless otherwise noted)		0.2	W
Thermal Resistance Junction to Ambient	RJA	(TA=25 unless otherwise noted)		625	/W
Junction Temperature	TJ	(TA=25 unless otherwise noted)		150
Storage Temperature	Tstg	(TA=25 unless otherwise noted)	-55	+150
Electrical Characteristics
Collector-base breakdown voltage	V(BR)CBO	IC=-10A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40 V, IE=0		-100	nA
Collector cut-off current	ICEX	VCE=-30V, VBE(off)=-3V		-50	nA
Emitter cut-off current	IEBO	VEB= -5V, IC=0		-100	nA
DC current gain	hFE1	VCE=-1V, IC= -10mA	100	300
DC current gain	hFE2	VCE= -1V, IC=-50mA	60
DC current gain	hFE3	VCE= -2V, IC=-100mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=-50mA, IB=-5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB=-5mA		-0.95	V
Transition frequency	fT	VCE=-20V,IC=-10mA,f=100MHz	300		MHz
Delay Time	td	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Rise Time	tr	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Storage Time	ts	VCC=-3V,IC=-10mA IB1=IB2=-1mA		225	nS
Fall Time	tf	VCC=-3V,IC=-10mA IB1=IB2=-1mA		75	nS