High voltage BiMOSFET transistor Littelfuse IXBK55N300 with ease of mounting and space saving features
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Product Description
Littelfuse BiMOSFETTM Monolithic Bipolar MOS Transistor
The IXBK55N300 and IXBX55N300 are high voltage, high gain BiMOSFETTM monolithic bipolar MOS transistors designed for applications requiring high blocking voltage and high current handling capability. They offer low conduction losses and MOS gate turn-on for drive simplicity. Key advantages include ease of mounting, space savings, and high power density. These transistors are suitable for Uninterruptible Power Supplies (UPS), Switch-Mode and Resonant-Mode Power Supplies, Capacitor Discharge Circuits, and Laser Generators.
Product Attributes
- Brand: Littelfuse
- Product Line: BiMOSFETTM
- Origin: USA (implied by US patents)
Technical Specifications
| Symbol | Test Conditions | IXBK55N300 / IXBX55N300 | Unit |
|---|---|---|---|
| Maximum Ratings | |||
| VCES | TJ = 25C to 150C | 3000 | V |
| VCGR | TJ = 25C to 150C, RGE = 1M | 3000 | V |
| VGES (Continuous) | 25 | V | |
| VGES (Transient) | 35 | V | |
| IC25 | TC = 25C (Chip Capability) | 130 | A |
| IC110 | TC = 110C | 55 | A |
| ICM | TC = 25C, 1ms | 600 | A |
| SSOA | VGE= 15V, TVJ = 125C, RG = 2, ICM = 110 A (RBSOA) Clamped Inductive Load | 1500 | V |
| PC | TC = 25C | 625 | W |
| TJ | -55 ... +150 | C | |
| TJM | 150 | C | |
| Tstg | -55 ... +150 | C | |
| TL (Max Lead Temp for Soldering) | 1.6 mm (0.062 in.) from Case for 10s | 300 | C |
| Mounting Torque (TO-264) | 1.13/10 | Nm/lb.in | |
| Mounting Force (PLUS247) | 20..120/4.5..27 | N/lb | |
| Weight (TO-264) | 10 | g | |
| Weight (PLUS247) | 6 | g | |
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | |||
| BVCES | IC = 1mA, VGE = 0V | 3000 | V |
| VGE(th) | IC = 4mA, VCE = VGE | 3.0 / 5.0 | V |
| ICES | VCE = VCES, VGE = 0V | 50 A / 3 mA (TJ=125C) | |
| IGES | VCE = 0V, VGE = 25V | 200 | nA |
| VCE(sat) | IC = 55A, VGE = 15V, Note 1 | 2.7 / 3.2 V (3.3 V at TJ=125C) | |
| gfS | IC = 55A, VCE = 10V, Note 1 | 32 / 50 | S |
| Cies | VCE = 25V, VGE = 0V, f = 1MHz | 7300 | pF |
| Coes | VCE = 25V, VGE = 0V, f = 1MHz | 275 | pF |
| Cres | VCE = 25V, VGE = 0V, f = 1MHz | 83 | pF |
| Qg | IC = 55A, VGE = 15V, VCE = 1000V | 335 | nC |
| Qge | IC = 55A, VGE = 15V, VCE = 1000V | 47 | nC |
| Qgc | IC = 55A, VGE = 15V, VCE = 1000V | 130 | nC |
| Resistive Switching Times, TJ = 25C | |||
| td(on) | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 52 | ns |
| tr | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 585 | ns |
| td(off) | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 215 | ns |
| tf | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 260 | ns |
| Resistive Switching Times, TJ = 125C | |||
| td(on) | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 54 | ns |
| tr | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 307 | ns |
| td(off) | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 230 | ns |
| tf | IC = 110A, VGE = 15V, VCE = 1250V, RG = 2 | 268 | ns |
| RthJC | 0.20 | C/W | |
| RthCS | 0.15 | C/W | |
| Reverse Diode Characteristic Values (TJ = 25C Unless Otherwise Specified) | |||
| VF | IF = 55A, VGE = 0V, Note 1 | 2.5 | V |
| trr | IF = 28A, VGE = 0V, -diF/dt = 100A/s | 1.9 | s |
| IRM | VR = 100V, VGE = 0V | 54 | A |
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