SOT23 Package LangJie SS8550 PNP Bipolar Junction Transistor for General Amplification and Switching

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Product Description

Product Overview

The SS8550 is a PNP bipolar junction transistor (BJT) housed in a SOT-23 package. It is complementary to the SS8050 transistor and is designed for general-purpose amplification and switching applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	MIN	MAX	UNIT
Collector-Base Voltage	VCBO		-40		V
Collector-Emitter Voltage	VCEO		-25		V
Emitter-Base Voltage	VEBO		-5		V
Collector Current - Continuous	IC			-1.5	A
Collector Power Dissipation	PC			0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-40V, IE=0		-0.1	A
Collector cut-off current	ICEO	VCE=-20V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	120
DC current gain	hFE(2)	VCE=-1V, IC=-800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB=-80mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB=-80mA		-1.2	V
Base-emitter on voltage	VBE(on)	IC=-1V,VCE =-10mA		-1.55	V
Base-emitter positive favor voltage	VBEF	VCE= -10V, IC= -50mA		-1	V
Transition frequency	fT	f=30MHz	100		MHz
Output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		20	pF