Motor Heating Power Supply Half Wave AC Control Thyristor Littelfuse MCR12DCMT4G Surface Mount Device

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Product Description

Product Overview

The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or wherever silicon gate-controlled devices are needed. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and UL recognized compound meeting flammability rating V-0. These thyristors also offer high ESD ratings.

Product Attributes

Brand: Littelfuse
Product Series: MCR12DCM, MCR12DCN
Certifications: UL Recognized (compound meets flammability rating V-0)
Package Options: PbFree Available
ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V

Technical Specifications

Rating Symbol	Parameter	MCR12DCM	MCR12DCN	Unit	Notes
VDRM	Peak Repetitive OffState Voltage	600	-	V	( 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open)
VRRM	Peak Repetitive OffState Voltage	-	800	V	( 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open)
IT (RMS)	OnState RMS Current	12		A	(180 Conduction Angles; TC = 90C)
IT(AV)	Average OnState Current	7.8		A	(180 Conduction Angles; TC = 90C)
ITSM	Peak NonRepetitive Surge Current	100		A	(1/2 Cycle, Sine Wave 60 Hz, TJ = 125C)
I2t	Circuit Fusing Consideration	41		Asec	(t = 8.3 ms)
PGM	Forward Peak Gate Power	5.0		W	(Pulse Width 10 sec,TC = 90C)
PGM (AV)	Forward Average Gate Power	0.5		W	(t = 8.3 msec, TC = 90C)
IGM	Forward Peak Gate Current	2.0		A	(Pulse Width 1.0 sec, TC= 90C)
TJ	Operating Junction Temperature Range	-40 to 125		C
Tstg	Storage Temperature Range	-40 to 150		C

Rating Symbol	Parameter	Value	Unit	Notes
RJC	Thermal Resistance, JunctiontoCase	2.2	C/W
RJA	Thermal Resistance, JunctiontoAmbient	88	C/W
RJA	Thermal Resistance, JunctiontoAmbient	80	C/W	(Note 2)
TL	Maximum Lead Temperature for Soldering Purposes	260	C	1/8" from Case for 10 Seconds

Characteristic Symbol	Parameter	Min	Typ	Max	Unit	Notes
IDRM, IRRM	Peak Repetitive Forward or Reverse Blocking Current (Gate Open)	-	-	0.01	mA	TJ = 25C
IDRM, IRRM	Peak Repetitive Forward or Reverse Blocking Current (Gate Open)	-	-	5.0	mA	TJ = 125C
VTM	Peak Forward OnState Voltage	-	1.3	1.9	V	(ITM = 16 A) (Note 2)
IGT	Gate Trigger Current (Continuous dc)	2.0	7.0	20	mA	(VD = 12 V; RL = 100 ), TJ = 25C
IGT	Gate Trigger Current (Continuous dc)	-	-	40	mA	(VD = 12 V; RL = 100 ), TJ = 40C
VGT	Gate Trigger Voltage (Continuous dc)	0.5	0.65	1.0	V	(VD = 12 V, RL = 100 ), TJ = 25C
VGT	Gate Trigger Voltage (Continuous dc)	-	-	2.5	V	(VD = 12 V, RL = 100 ), TJ = 40C
VGD	Gate NonTrigger Voltage	0.2	-	-	V	(VD = 12 V, RL = 100 ), TJ = 125C
IH	Holding Current	4.0	22	40	mA	(VD = 12 V, Gate Open, Initiating Current = 200 mA), TJ = 25C
IH	Holding Current	-	-	80	mA	(VD = 12 V, Gate Open, Initiating Current = 200 mA), TJ = 40C
IL	Latch Current	4.0	22	40	mA	(VD = 12 V, IG = 20 A, TJ = 25C)
IL	Latch Current	-	-	80	mA	(VD = 12 V, IG = 40 A, TJ = -40C)
dv/dt	Critical Rate of Rise of OffState Voltage	50	200	-	V/s	(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)