SCR component Littelfuse S4X8BSRP featuring sensitive gate and glass passivated junctions for operation

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The EV Series 0.8 Amp Sensitive SCRs are designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications. These SCRs feature a small die planar construction, high static dv/dt, and lower turn-off time (tq). All junctions are glass-passivated for long-term reliability and parametric stability. They offer a sensitive gate for direct microprocessor interface and are available in thru-hole and surface mount packages.

Product Attributes

Brand: Littelfuse
Series: EV Series
Certifications: RoHS compliant, Halogen-Free
Material: UL recognized epoxy meeting flammability rating 94V-0
Terminal Finish: 100% Matte Tin-plated
Lead Material: Copper Alloy

Technical Specifications

Parameter	TO-92	SOT-89	SOT-223	Unit
RMS on-state current (IT(RMS)) TC = 55C / TC = 60C / TL = 60C	0.8	0.8	0.8	A
Average on-state current (IT(AV)) TC = 55C / TC = 60C / TL = 60C	0.51	0.51	0.51	A
Non repetitive surge peak on-state current (ITSM) F= 50Hz	8	8	8	A
Non repetitive surge peak on-state current (ITSM) F= 60Hz	10	10	10	A
I2t Value for fusing tp = 10 ms F = 50 Hz	0.32	0.32	0.32	A2s
I2t Value for fusing tp = 8.3 ms F = 60 Hz	0.41	0.41	0.41	A2s
Critical rate of rise of on-state current (di/dt) IG = 10mA TJ = 125C	50	50	50	A/s
Peak Gate Current (IGM) tp = 10 s TJ = 125C	1.0	1.0	1.0	A
Average Gate Power Dissipation (PG(AV)) TJ = 125C	0.1	0.1	0.1	W
Storage Junction Temperature Range (Tstg)	-40 to 150	-40 to 150	-40 to 150	C
Operating Junction Temperature Range (TJ)	-40 to 125	-40 to 125	-40 to 125	C
DC Gate Trigger Current (IGT) VD = 6V RL = 100 (SxX8yS1)	MIN. 0.5, MAX. 5	MIN. 1, MAX. 50	MIN. 15, MAX. 200	A
DC Gate Trigger Voltage (VGT) VD = 6V RL = 100	MAX. 0.8	MAX. 0.8	MAX. 0.8	V
Peak Reverse Gate Voltage (VGRM) IRG = 10A	MIN. 5	MIN. 5	MIN. 5	V
Holding Current (IH) RGK = 1 K Initial Current = 20mA	MAX. 5	MAX. 5	MAX. 5	mA
Critical Rate-of-Rise of Off-State Voltage ((dv/dt)s) TJ = 125C VD = VDRM /VRRM Exp. Waveform RGK =1 k	MIN. 75	MIN. 75	MIN. 75	V/s
Gate Non-Trigger Voltage (VGD) VD = VDRM RGK =1 k TJ = 25C	MIN. 0.2	MIN. 0.2	MIN. 0.2	V
Turn-Off Time (tq) TJ = 25C @ 600 V RGK =1 k	MAX. 30	MAX. 25	MAX. 25	s
Turn-On Time (tgt) IG=10mA PW = 15sec IT = 1.6A(pk)	TYP. 2.0	TYP. 2.0	TYP. 2.0	s
Peak On-State Voltage (VTM) ITM = 1.6A (pk)	MAX. 1.70	MAX. 1.70	MAX. 1.70	V
Off-State Current, Peak Repetitive (IDRM) TJ = 25C @ VD = VDRM RGK =1 k	MAX. 3	MAX. 3	MAX. 3	A
Off-State Current, Peak Repetitive (IDRM) TJ = 125C @ VD = VDRM RGK =1 k	MAX. 500	MAX. 500	MAX. 500	A
Junction to Case Thermal Resistance (Rth(j-c)) IT = 0.8A (RMS)	75	50	30	C/W
Junction to Ambient Thermal Resistance (Rth(j-a)) IT = 0.8A (RMS)	150	90	60	C/W