Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or any application requiring silicon gate-controlled devices for half-wave operation. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and epoxy that meets UL 94 V-0. These devices also offer high ESD ratings.

Product Attributes

Brand: Littelfuse, Inc.
Certifications: UL 94 V-0 (Epoxy)
ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
Pb-Free Packages Available

Technical Specifications

Rating Symbol	MCR12DCM	MCR12DCN	Unit	Description
VDRM, VRRM	600	800	V	Peak Repetitive Off-State Voltage (Note 1) (-40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open)
IT (RMS)	12		A	On-State RMS Current (180 Conduction Angles; TC = 90C)
IT(AV)	7.8		A	Average On-State Current (180 Conduction Angles; TC = 90C)
ITSM	100		A	Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C)
I2t	41		Asec	Circuit Fusing Consideration (t = 8.3 ms)
PGM	5.0		W	Forward Peak Gate Power (Pulse Width 10 sec, TC = 90C)
PGM (AV)	0.5		W	Forward Average Gate Power (t = 8.3 msec, TC = 90C)
IGM	2.0		A	Forward Peak Gate Current (Pulse Width 1.0 sec, TC= 90C)
TJ	-40 to 110		C	Operating Junction Temperature Range
Tstg	-40 to 150		C	Storage Temperature Range
RJC	2.2		C/W	Thermal Resistance, Junction-to-Case
RJA	88		C/W	Thermal Resistance, Junction-to-Ambient
RJA (Note 2)	80		C/W	Thermal Resistance, Junction-to-Ambient
TL	260		C	Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
IDRM, IRRM	0.01 (TJ = 25C), 5.0 (TJ = 125C)		mA	Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open)
dv/dt	50 to 200		V/s	Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
VTM	1.3 to 1.9		V	Peak Forward On-State Voltage (Note 2) (ITM = 16 A)
IGT	0.5 to 1.0 (TJ = 25C), 2.0 (TJ = 40C)		mA	Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 )
VGT	0.3 to 1.0 (TJ = 25C), 1.5 (TJ = 40C)		V	Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
tgt	0.2		V	Gate Non-Trigger Voltage (VD = 12 V, RL = 100 ) TJ = 125C
IH	4.0 to 40 (TJ = 25C), 80 (TJ = 40C)		mA	Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
IL	4.0 to 40 (VD = 12 V, IG = 20 A, TJ = 25C), 80 (VD = 12 V, IG = 40 A, TJ = -40C)		mA	Latch Current