Low leakage current diode Littelfuse IXYS VBE60-06A designed for high frequency and snubber circuits
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Product Description
Product Overview
The VBE60-06A is a high-performance, low-loss, fast recovery diode with soft recovery characteristics. Designed for demanding applications, it offers improved thermal behavior, very low leakage current, and avalanche voltage rating for reliable operation. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Part Number: VBE60-06A
- Package: SOT-227B (minibloc)
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Backside: Isolated
- Base Plate: Copper internally DCB isolated
- Isolation Voltage: 3000 V~
Technical Specifications
| Symbol | Definition | Conditions | Unit | min. | typ. | max. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| IF | DC forward current | TVJ = 100C | A | 60 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 600 | ||
| VF | forward voltage drop | IF = 60 A; TVJ = 25C | V | 1.54 | 1.79 | |
| VF0 | threshold voltage | TVJ = 25C | V | 0.98 | ||
| rF | slope resistance for power loss calculation only | TVJ = 25C | m | 8.2 | ||
| IR | reverse current, drain current | VR = 600 V; TVJ = 25C | A | 150 | ||
| Ptot | total power dissipation | TC = 25C | W | 110 | ||
| RthJC | thermal resistance junction to case | K/W | 1.15 | 1.54 | ||
| RthCH | thermal resistance case to heatsink | K/W | 0.1 | |||
| trr | reverse recovery time | IF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100C | ns | 35 | ||
| IRM | max. reverse recovery current | IF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100C | A | 10 | ||
| Qr | reverse recovery charge | IF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100C | nC | 100 | ||
| CJ | junction capacitance | VR = 400 V; f = 1 MHz; TVJ = 25C | pF | 26 | ||
| TVJ | virtual junction temperature | C | -40 | 150 | ||
| Tstg | storage temperature | C | -40 | 150 | ||
| VISOL | isolation voltage | t = 1 second; RMS; I 1 mA; 50/60 Hz | V | 3000 |
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