Product Overview
The DPG60C300HB is a high-performance Fast Recovery Diode from IXYS, featuring a common cathode configuration and HiPerFRED technology. It is designed for low loss and soft recovery, offering very short recovery times and improved thermal behavior with very low reverse recovery current (IRM) values. Its soft reverse recovery characteristic minimizes EMI/RFI, while low IRM reduces power dissipation and turn-on losses in commutating switches. This diode is ideal for antiparallel applications in high-frequency switching devices, antisaturation, snubber circuits, and as a free-wheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Technology: HiPerFRED
- Package: TO-247 (Industry standard outline)
- Compliance: RoHS compliant
- Material: Epoxy meets UL 94V-0
- Diode Type: Fast Recovery Diode, Common Cathode
Technical Specifications
| Part Number | Diode Type | Voltage Rating (VRRM) | Current Rating (IF AV) | Package | Features / Advantages | Applications |
| DPG60C300HB | Fast Recovery Diode, Common Cathode | 300 V | 300 A | TO-247 | Planar passivated chips, Very low leakage current, Very short recovery time, Improved thermal behaviour, Very low Irm-values, Very soft recovery behaviour, Avalanche voltage rated, Soft reverse recovery for low EMI/RFI | Antiparallel diode for high frequency switching devices, Antisaturation diode, Snubber diode, Free wheeling diode, Rectifiers in switch mode power supplies (SMPS), Uninterruptible power supplies (UPS) |
| Symbol | Definition | Conditions | Unit | Typical | Maximum |
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | | 300 |
| VRMSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | | 300 |
| IF(AV) | average forward current | TC = 25C | A | | 300 |
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | | 360 |
| VF0 | threshold voltage | TVJ = 175C | V | | 0.70 |
| R0 | slope resistance for power loss calculation only | TVJ = 175C | m | | 0.7 |
| RthJC | thermal resistance junction to case | | K/W | 0.95 | 1.06 |
| RthCH | thermal resistance case to heatsink | | K/W | 0.25 | |
| trr | reverse recovery time | IF = 30 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | ns | 35 | 55 |
| IRM | max. reverse recovery current | IF = 30 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | A | 7 | |
| Qrr | reverse recovery charge | IF = 30 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | C | 35 | |
| VF | forward voltage drop | IF = 60 A; TVJ = 125C | V | 1.34 | 1.63 |
| Ptot | total power dissipation | TC = 25C | W | | 150 |
| TVJ | virtual junction temperature | | C | | 175 |
| Tstg | storage temperature | | C | -55 | 150 |
| Weight | | | g | | 6 |
| Symbol | Inches | Millimeter |
| min. | max. | min. | max. |
| A | 0.185 | 0.209 | 4.70 | 5.30 |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 |
| A2 | 0.059 | 0.098 | 1.50 | 2.49 |
| D | 0.819 | 0.845 | 20.79 | 21.45 |
| E | 0.610 | 0.640 | 15.48 | 16.24 |
| E2 | 0.170 | 0.216 | 4.31 | 5.48 |
| e | 0.215 BSC | 5.46 BSC |
| L | 0.780 | 0.800 | 19.80 | 20.30 |
| L1 | - | 0.177 | - | 4.49 |
| P | 0.140 | 0.144 | 3.55 | 3.65 |
| Q | 0.212 | 0.244 | 5.38 | 6.19 |
| S | 0.242 BSC | 6.14 BSC |
| b | 0.039 | 0.055 | 0.99 | 1.40 |
| b2 | 0.065 | 0.094 | 1.65 | 2.39 |
| b4 | 0.102 | 0.135 | 2.59 | 3.43 |
| c | 0.015 | 0.035 | 0.38 | 0.89 |
| D1 | 0.515 | - | 13.07 | - |
| D2 | 0.020 | 0.053 | 0.51 | 1.35 |
| E1 | 0.530 | - | 13.45 | - |
| P1 | - | 0.29 | - | 7.39 |
