High Voltage Fast Recovery Diode Littelfuse IXYS DSEI12-12A Suitable for SMPS and UPS Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The DSEI12-12A is a Fast Recovery Epitaxial Diode (FRED) featuring planar passivated chips for excellent performance and reliability. It offers a very short recovery time, improved thermal behavior, and very low Irm-values, contributing to soft reverse recovery for reduced EMI/RFI. This diode is designed for applications requiring antiparallel functionality in high-frequency switching devices, antisaturation, snubber circuits, and as a free-wheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its avalanche voltage rating ensures reliable operation.
Product Attributes
- Brand: IXYS
- Part Number: DSEI12-12A
- Package: TO-220
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Construction: Planar passivated chips
Technical Specifications
| Symbol | Definition | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VRRM | Max. repetitive reverse blocking voltage | TVJ = 25C | 1200 | V | ||
| VRSM | Max. non-repetitive reverse blocking voltage | TVJ = 25C | 250 | V | ||
| IF(AV) | Average forward current | TC = 100C | 12 | A | ||
| IFSM | Max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | 75 | A | ||
| Ptot | Total power dissipation | TC = 25C | 150 | W | ||
| VF | Forward voltage drop | IF = 11 A; TVJ = 100C | 1.77 | 2.23 | V | |
| VF0 | Threshold voltage | TVJ = 150C | 1.77 | V | ||
| rF | Slope resistance for power loss calculation only | IF = 24 A | 38 | m | ||
| IR | Reverse current, drain current | VR = 1200 V; TVJ = 25C | 150 | A | ||
| IR | Reverse current, drain current | VR = 1200 V; TVJ = 100C | 4 | mA | ||
| trr | Reverse recovery time | IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C | 300 | ns | ||
| IRM | Max. reverse recovery current | IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C | 22 | A | ||
| Qr | Reverse recovery charge | IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C | 22 | C | ||
| CJ | Junction capacitance | VR = 600 V; f = 1 MHz; TVJ = 25C | 150 | pF | ||
| RthJC | Thermal resistance junction to case | 0.50 | K/W | |||
| RthCH | Thermal resistance case to heatsink | 0.40 | K/W | |||
| TJ | Virtual junction temperature | 150 | C | |||
| Tstg | Storage temperature | -40 | 150 | C | ||
| Weight | 1.7 | g | ||||
| Mounting torque | 0.6 | Nm | ||||
| Mounting force with clip | 20 | 60 | N |
Ordering Information:
- Ordering Number: DSEI12-12A
- Marking on Product: DSEI12-12A
- Delivery Mode: Tube
- Quantity Code: 50
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