Littelfuse IXYS DH20-18A planar passivated chip diode featuring soft reverse recovery and dissipation
Product Overview
The DH20-18A is a high-performance, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and turn-on losses in commutating switches, while also minimizing EMI/RFI. This diode is avalanche voltage rated for reliable operation and is suitable for applications such as antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, and free-wheeling diodes. It is also utilized in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Part Number: DH20-18A
- Package: TO-247
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Recovery Behavior: Soft reverse recovery
- Chip Technology: Planar passivated
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 1800 | ||
| VR(RRM) | max. repetitive reverse blocking voltage | V | 1800 | |||
| IF(AV) | average forward current | TC = 25C | A | 20 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 150 | ||
| VF | forward voltage drop | IF = 20 A; TVJ = 25C | V | 1.44 | 2.24 | |
| VF0 | threshold voltage | IF = 20 A; TVJ = 25C | V | 1.44 | ||
| rF | slope resistance for power loss calculation only | IF = 20 A; TVJ = 25C | m | 43 | ||
| IR | reverse current, drain current | VR = 900 V; TVJ = 25C | A | 125 | ||
| IRM max. | reverse recovery current | IF = 20 A; diF/dt = 400 A/s; TVJ = 125C | A | 300 | 550 | |
| trr | reverse recovery time | IF = 20 A; diF/dt = 400 A/s; TVJ = 125C | ns | 25 | ||
| Qrr | reverse recovery charge | IF = 20 A; diF/dt = 400 A/s; TVJ = 125C | C | 300 | ||
| Erec | recovery energy | IF = 20 A; diF/dt = 400 A/s; TVJ = 125C | mJ | 15 | ||
| RthJC | thermal resistance junction to case | K/W | 0.9 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.3 | |||
| Ptot | total power dissipation | TC = 25C | W | 140 | ||
| TVJ | virtual junction temperature | C | 150 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| IRMS | RMS current | per terminal | A | 70 | ||
| Mounting torque | Nm | 1.2 | 0.8 | |||
| Weight | g | 6 |
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