Silicon Bridge Rectifier LGE DB157S with 1000 Volt Peak Reverse Voltage and Molded Plastic Construction

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The DB151S-DB157S series are silicon bridge rectifiers designed for applications requiring high voltage and surge handling capabilities. They feature glass passivated chip junctions and a reliable, inexpensive molded plastic construction. These rectifiers are suitable for lead soldering per MIL-STD-202 method 208.

Product Attributes

Brand: LG Semiconductor (implied by URL)
Origin: Not specified
Material: Lead: silver plated copper, solderde plated; Plastic material has UL flammability classification 94V-O
Color: Not specified
Certifications: UL flammability classification 94V-O

Technical Specifications

Characteristic	Symbol	DB151S	DB152S	DB153S	DB154S	DB155S	DB156S	DB157S	Units
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Reverse Voltage	VRMS	35	75	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum average forward Output current @TA=40	IF(AV)	1.5							A
Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load	IFSM	50							A
It Rating for fusing @Tj=25	It	10							AS
Maximum instantaneous forward voltage at 1.5A	VF	1.1							V
Maximum reverse current @TA=25 at rated DC blocking voltage	IR	5							A
Maximum reverse current @TA=100	IR	0.5							mA
Operating junction temperature range	TJ	-55 -- +150
Storage temperature range	TSTG	-55 -- +150
Typical thermal resistance junction to ambient	JA	70							/W
Typical thermal resistance junction to case	JC	31							/W
Typical thermal resistance junction to lead	JL	29							/W