Littelfuse IXYS MEA75-12DA Diode Module Featuring DCB Ceramic Base Plate and High Isolation Voltage
Product Overview
The MEA/MEK/MEE 75-12DA series are Fast Recovery Epitaxial Diode (FRED) modules designed for high-frequency switching applications. These modules feature planar passivated chips, offering low switching losses and soft recovery behavior for high reliability circuit operation. They contribute to reduced voltage peaks, enabling simpler protection circuits and low noise switching. Applications include antiparallel diodes for high-frequency switching devices, freewheeling diodes in converters and motor control circuits, inductive heating and melting, uninterruptible power supplies (UPS), and ultrasonic cleaners and welders. Available in Common Anode (MEA), Common Cathode (MEK), and Phase-Leg (MEE) configurations, these modules are housed in a RoHS compliant TO-240AA package with a DCB ceramic base plate.
Product Attributes
- Brand: IXYS (Littelfuse)
- Package: TO-240AA
- RoHS Compliant
- Base Plate Material: DCB Ceramic
- Backside: Isolated
Technical Specifications
| Model | Part Number | VRRM (V) | IFAV (A) | trr (ns) | Package Type | Isolation Voltage (V~) | Height (mm) | Weight (g) | Ordering Code |
|---|---|---|---|---|---|---|---|---|---|
| MEA 75-12DA | MEA 75-12DA | 1200 | 75 | 230 | TO-240AA | 4800 | 30 | 76 | 469130 |
| MEK 75-12DA | MEK 75-12DA | 1200 | 75 | 230 | TO-240AA | 4800 | 30 | 76 | 468541 |
| MEE 75-12DA | MEE 75-12DA | 1200 | 75 | 230 | TO-240AA | 4800 | 30 | 76 | 469297 |
| Symbol | Definition | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VRSM | Non-repetitive reverse blocking voltage | TVJ = 25C | 1200 | V | ||
| VRRM | Repetitive reverse blocking voltage | TVJ = 25C | 1200 | V | ||
| IR | Reverse current | VR = VRRM, TVJ = 25C | 2 | mA | ||
| IR | Reverse current | VR = 0.8VRRM, TVJ = 25C | 0.5 | mA | ||
| IR | Reverse current | VR = 0.8VRRM, TVJ = 125C | 34 | mA | ||
| VF | Forward voltage | IF = 100 A, TVJ = 25C | 2.17 | V | ||
| VF | Forward voltage | IF = 100 A, TVJ = 125C | 1.85 | V | ||
| VF | Forward voltage | IF = 300 A, TVJ = 25C | 2.64 | V | ||
| VF | Forward voltage | IF = 300 A, TVJ = 125C | 2.58 | V | ||
| IFRMS | RMS forward current | TC = 75C | 107 | A | ||
| IFAV | Average forward current | TC = 75C, TVJ = 150C, rectangular, d = 0.5 | 75 | A | ||
| VT0 | Threshold voltage | TVJ = TVJM | 1.48 | V | ||
| rT | Slope resistance | TVJ = TVJM | 3.65 | m | ||
| RthJC | Thermal resistance junction to case | 0.10 | K/W | |||
| RthCH | Thermal resistance junction to heatsink | 0.45 | K/W | |||
| Ptot | Total power dissipation | TC = 25C | 280 | W | ||
| IFSM | Max. surge forward current | t = 10 ms (50 Hz), sine, TVJ = 45C | 1200 | A | ||
| IFSM | Max. surge forward current | t = 8.3 ms (60 Hz), sine, TVJ = 45C | 1300 | A | ||
| IFSM | Max. surge forward current | t = 10 ms (50 Hz), sine, TVJ = 150C | 1080 | A | ||
| IFSM | Max. surge forward current | t = 8.3 ms (60 Hz), sine, TVJ = 150C | 1170 | A | ||
| I2t | I2t value for fusing | t = 10 ms (50 Hz), sine, TVJ = 45C | 7200 | A2s | ||
| I2t | I2t value for fusing | t = 8.3 ms (60 Hz), sine, TVJ = 45C | 7100 | A2s | ||
| I2t | I2t value for fusing | t = 10 ms (50 Hz), sine, TVJ = 150C | 5800 | A2s | ||
| I2t | I2t value for fusing | t = 8.3 ms (60 Hz), sine, TVJ = 150C | 5700 | A2s | ||
| trr | Max. reverse recovery time | IF = 70 A; VR = 600 V, TVJ = 25C | 140 | ns | ||
| trr | Max. reverse recovery time | IF = 70 A; VR = 600 V, TVJ = 100C | 200 | ns | ||
| IRM | Max. reverse recovery current | -di/dt = 400 A/s; L 0.05 H, TVJ = 25C | 25 | A | ||
| IRM | Max. reverse recovery current | -di/dt = 400 A/s; L 0.05 H, TVJ = 100C | 30 | A | ||
| trr | Max. reverse recovery time | -di/dt = 400 A/s; L 0.05 H, TVJ = 25C | 230 | ns | ||
| trr | Max. reverse recovery time | -di/dt = 400 A/s; L 0.05 H, TVJ = 100C | 330 | ns | ||
| IRM | Max. reverse recovery current | -di/dt = 400 A/s; L 0.05 H, TVJ = 25C | 33 | A | ||
| IRM | Max. reverse recovery current | -di/dt = 400 A/s; L 0.05 H, TVJ = 100C | 40 | A | ||
| IRMS | RMS current per terminal | 200 | A | |||
| TVJ | Virtual junction temperature | -40 | 150 | C | ||
| Top | Operation temperature | -40 | 125 | C | ||
| Tstg | Storage temperature | -40 | 125 | C | ||
| MD | Mounting torque | 2.5 | 4 | Nm | ||
| MT | Terminal torque | 2.5 | 4 | Nm | ||
| dSpp/App | Creepage distance on surface terminal to terminal | 13.0 | mm | |||
| dSpb/Apb | Striking distance through air terminal to terminal | 16.0 | mm | |||
| dSpp/App | Creepage distance on surface terminal to backside | 9.7 | mm | |||
| dSpb/Apb | Striking distance through air terminal to backside | 16.0 | mm | |||
| VISOL | Isolation voltage | t = 1 second, 50/60 Hz, RMS; IISOL < 1 mA | 4800 | V | ||
| VISOL | Isolation voltage | t = 1 minute, 50/60 Hz, RMS; IISOL < 1 mA | 4000 | V |
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