High Voltage Diode LGE ES5K with Metal Silicon Junction and 800 Volt Maximum DC Blocking Voltage Rating

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The ES5A thru ES5M series are Metal-Silicon Junction diodes designed for surface mount applications. They feature a guard ring for overvoltage protection, high forward surge current capability, and a super low forward voltage. These diodes are capable of high temperature soldering up to 260 for 10 seconds at terminals.

Product Attributes

Brand: lgesemi (implied from URL)
Material: Metal-Silicon Junction, Transfer molded plastic (Epoxy)
Flame Retardant: UL94V-O
Certifications: UL94V-O, MIL-STD-750 method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounce, 0.25 grams

Technical Specifications

Symbol	ES5A	ES5B	ES5D	ES5G	ES5J	ES5K	ES5M	Unit
Maximum Repetitive Peak Reverse Voltage (VRRM)	50	100	200	400	600	800	1000	Volts
Maximum RMS Voltage (VRMS)	35	70	140	280	420	560	720	Volts
Maximum DC Blocking Voltage (VDC)	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Rectified Current (I(AV))	5.0							Amp
Peak Forward Surge Current (IFSM) 8.3ms single half sine-wave	150							Amps
Maximum Instantaneous Forward Voltage at 5.0A (VF)	0.95	1.25	1.68					Volts
Maximum DC Reverse Current at rated DC Blocking Voltage (IR) TA = 25	5							u A
Maximum DC Reverse Current at rated DC Blocking Voltage (IR) TA = 100	100
Maximum reverse recovery time (Trr)	35							ns
Operating Temperature Range (TJ)	-55 to +150
Storage Temperature Range (TSTG)	-55 to +150