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Industrial thyristor Littelfuse IXYS P0366WC04C fast turn off device for motor control and inverter

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Product Description

Fast Turn-off Thyristor Types P0366WC04# & P0366WC08#

This datasheet details the P0366WC04# and P0366WC08# series of fast turn-off thyristors. These devices are designed for applications requiring high-speed switching and efficient power control. Key advantages include their fast turn-off characteristics, enabling higher operating frequencies and reduced switching losses compared to standard thyristors. They are suitable for demanding industrial applications such as motor control, power supplies, and inverters.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Rating Units Conditions
VOLTAGE RATINGS
Repetitive peak off-state voltage (VDRM) 400-800 V Note 1
Non-repetitive peak off-state voltage (VDSM) 400-800 V Note 1
Repetitive peak reverse voltage (VRRM) 400-800 V Note 1
Non-repetitive peak reverse voltage (VRSM) 500-900 V Note 1
OTHER RATINGS
Mean on-state current (IT(AV)) 366 A Tsink=55C, Note 2
Mean on-state current (IT(AV)) 130 A Tsink=85C, Note 2
Nominal RMS on-state current (IT(RMS)) 756 A Tsink=25C, Note 2
D.C. on-state current (IT(d.c.)) 590 A Tsink=25C, Note 4
Peak non-repetitive surge (ITSM) 4700 A tp=10ms, VRM=0.6VRRM, Note 5
Peak non-repetitive surge (ITSM2) 5170 A tp=10ms, VRM10V, Note 5
I2t capacity for fusing (I2t) 11010 As tp=10ms, VRM=0.6VRRM, Note 5
I2t capacity for fusing (I2t) 13410 As tp=10ms, VRM10V, Note 5
Maximum rate of rise of on-state current (di/dt)cr (repetitive) 500 A/s Note 6
Maximum rate of rise of on-state current (di/dt)cr (non-repetitive) 1000 A/s Note 6
Peak forward gate voltage (VFGM) 12 V -
Peak forward gate current (IFGM) 18 A -
Peak reverse gate voltage (VRGM) 5 V -
Mean forward gate power (PG(AV)) 1.5 W -
Peak forward gate power (PGM) 60 W 100s pulse width
Non-trigger gate voltage (VGD) 0.25 V Rated VDRM, Note 7
Operating temperature range (THS) -40 to +125 C -
Storage temperature range (Tstg) -40 to +150 C -
CHARACTERISTICS
Maximum peak on-state voltage (VTM) 1.88 V ITM=715A
Threshold voltage (VT0) 1.4 V -
Slope resistance (rT) 0.67 m -
Critical rate of rise of off-state voltage (dv/dt)cr 200 V/s VD=80% VDRM, Note 1
Peak off-state current (IDRM) 30 mA Rated VDRM, Note 1
Peak reverse current (IRRM) 30 mA Rated VRRM, Note 1
Gate trigger voltage (VGT) 3.0 V Tj=25C, Note 1
Gate trigger current (IGT) 200 mA Tj=25C, VD=6V, IT=1A, Note 1
Holding current (IH) 600 mA Tj=25C, Note 1
Recovered charge (Qrr) 25 C ITM=300A, tp=500s, di/dt=20A/s, Vr=50V, Note 1
Recovered charge, 50% Chord (Qra) 10 C -
Turn-off time (tq) 15-30 s ITM=300A, tp=500s, di/dt=20A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s, Note 2
Turn-off time (tq) 10-15 s ITM=300A, tp=500s, di/dt=50A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s, Note 2
Thermal resistance, junction to heatsink (RthJK) (Double side cooled) 0.095 K/W -
Thermal resistance, junction to heatsink (RthJK) (Single side cooled) 0.190 K/W -
Mounting force (F) 3.3 - 5.5 kN -
Weight (Wt) 70 g -

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