Power Management Silicon P Channel MOSFET Lewa Micro LWS6080A23 with Low RDS ON and Halogen Free SOT 223 Package
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Product Description
Product Overview
The LWS6080A23 is a Silicon P-Channel Power MOSFET utilizing advanced SGT technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switching, hard switched and high frequency circuits, and power management. The device features low reverse transfer capacitances and is packaged in a ROHS standard and Halogen Free compliant SOT-223 package.
Product Attributes
- Brand: LW-Micro
- Origin: Shanghai, China
- Material: Silicon
- Certifications: ROHS standard, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-to-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25 C | -60 | A | ||
| Continuous Drain Current | ID | TA=100 C | -3.1 | A | ||
| Pulsed Drain Current | IDM | a1 | -20 | A | ||
| Power Dissipation | PD | TA=25 C | 3.0 | W | ||
| Maximum Temperature for Soldering | TL | 260 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | a2 | 41.6 | /W | ||
| Electrical Characteristics (TA = 25 C, unless otherwise specified) | ||||||
| Drain to Source Breakdown Voltage | VDSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.0 | -1.65 | -2.1 | V |
| Drain-to-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5.0A | 50.5 | m | ||
| Drain-to-Source On-Resistance | RDS(ON)2 | VGS=-4.5V, ID=-4.0A | 75 | m | ||
| Drain to Source Leakage Current | IDSS | VDS=-60V, VGS=0V | -1.0 | A | ||
| Gate to Source Leakage Current | IGSS(F) | VGS=+20V, VDS=0V | 100 | nA | ||
| Gate to Source Leakage Current | IGSS(R) | VGS=-20V, VDS=0V | -100 | nA | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1.0MHz | 100 | pF | ||
| Output Capacitance | Coss | VDS=-30V, VGS=0V, f=1.0MHz | 83 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V, VGS=0V, f=1.0MHz | 13 | nC | ||
| Turn-on Delay Time | td(ON) | VGS=-10V, ID=-5.0A | 4.0 | ns | ||
| Rise Time | tr | 6.0 | ns | |||
| Turn-Off Delay Time | td(OFF) | 11 | ns | |||
| Fall Time | tf | 2.9 | ns | |||
| Total Gate Charge | Qg | VGS=-10V, ID=-5.0A | 1.5 | C | ||
| Gate Drain Charge | Qgd | 1.2 | nC | |||
| Gate Source Charge | Qgs | 3.0 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS=-5.0A, VGS=0V | -1.2 | V | ||
| Diode Forward Current | ISM | -20 | A | |||
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