compact LGE MB6S silicon bridge rectifiers with molded plastic body and 600 volt peak voltage rating
MB05S-MB10S SILICON BRIDGE RECTIFIERS
High-performance silicon bridge rectifiers designed for efficient power conversion. These devices feature glass-passivated chip junctions for enhanced reliability and high surge overload capability of up to 30A peak. Their compact design saves valuable space on printed circuit boards, making them ideal for space-constrained applications. The series is UL recognized and constructed with plastic material meeting U/L flammability classification 94V-O. High-temperature soldering is guaranteed at 260C/10 seconds at 5 lbs. tension.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Molded plastic body over passivated junctions, plated leads
- Color: Not specified
- Certifications: UL recognized under Component Index, file number E239431; Plastic material U/L flammability classification 94V-O
Technical Specifications
| Characteristic | Symbol | MB05S | MB1S | MB2S | MB4S | MB6S | MB8S | MB10S | Units |
| Peak Repetitive Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current @TA=25 | IF(AV) | 0.5 1) | 0.8 2) | A | |||||
| Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load | IFSM | 30 | A | ||||||
| Maximum instantaneous forward voltage at 0.4 A | VF | 1.0 | V | ||||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 5.0 | A | ||||||
| Maximum reverse current @TA=125 | IR | 100 | A | ||||||
| Typical junction capacitance per leg (NOTE 3) | CJ | 13 | pF | ||||||
| Typical thermal resistance per leg (NOTE 1) (NOTE 2) | RJA | 25 | /W | ||||||
| Typical thermal resistance per leg (NOTE 1) (NOTE 2) | RJL | 29 | /W | ||||||
| Operating junction temperature range | TJ | -55 ---- +150 | |||||||
| Storage temperature range | TSTG | -55 ---- +150 | |||||||
| Current squared time t < 8.3ms , Ta = 25 | I2t | 3.74 | |||||||
NOTES:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
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